Preparation method of Cu-In-Ga-Se thin-film solar cell

Abstract

A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.

Description

Technical field: [0001] The invention relates to the field of solar cells, and more specifically, to a method for preparing a copper indium gallium selenium thin film solar cell. Background technique: [0002] As we all know, copper indium gallium selenide compound has a chalcopyrite structure, which can be prepared on a soft or rigid substrate as a solar power generation material, and the copper indium gallium selenide thin film solar cell made by it has the advantages of high stability and low cost . At present, the available energy on the earth is becoming increasingly scarce, and it is an indisputable fact that during the use of fossil energy, carbon and sulfur oxides will be emitted, causing air pollution and aggravating the earth's greenhouse effect, deteriorating the earth's environment and abnormal climate. . Therefore, the development of pollution-free renewable energy is one of the most important scientific research projects in the world. And solar energy is non...

AI Technical Summary

Problems solved by technology

[0006] The method of preparing thin film solar cells with a chalcopyrite structure by selenization has some disadvantages, such as long production cycle, high energy consumption, high consumption of Se, highly toxic Se vapor, uneven distribution of Se, and gradient of Se, etc.

[0007] In addition, for the process of controlling the gradient distribution of Ga, the above-mentioned various process methods are difficult to realize in one step.

For example, the three-stage co-evaporation method developed by the NREL laboratory in the United States realizes that Ga presents the above-mentioned bandgap gradient A or V-shaped bandgap gradient. Different elements participate in the evaporation reaction in three stages. The process is very complicated and requires precise real-time control. Only then can it be realized

Although this method can prepare solar thin-film cells with high conversion efficiency, it is not conducive to low-cost, large-scale, and large-scale production.

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