Semiconductor device with trench super junction MOS (metal oxide semiconductor) structure and manufacturing method thereof

Abstract

The invention relates to a semiconductor device with a trench super junction MOS (metal oxide semiconductor) structure, and further relates to a manufacturing method of the semiconductor device with the trench super junction MOS structure. The manufacturing method comprises the step of arranging a super junction structure into semiconductor materials between trenches, so that the manufacturing process of the super junction structure is simplified; and the device is a basic structure for manufacturing a power MOSFET (metal-oxide-semiconductor field effect transistor) device and a super potential barrier rectifier.

Description

technical field [0001] The invention relates to a semiconductor device with a trench superjunction MOS structure, which is the basic structure of a super barrier rectifier and a power MOSFET device. The invention also relates to a preparation method for a semiconductor device with a trench superjunction MOS structure. Background technique [0002] Semiconductor devices with trench structures and super junction structures have become an important trend in device development. For power semiconductor devices, the requirement to continuously reduce the on-resistance and continuously increase the current density has become an important trend in the development of devices. [0003] The cross-sectional view of a conventional trench MOS device is shown in figure 1 As shown, gate oxide 5 is grown on the entire inner wall of the vertical trench, gate polysilicon 6 is filled in the trench, and active region 4 , body region 3 and drain region 2 are arranged from top to bottom in the si...

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Problems solved by technology

When increasing the reverse breakdown voltage between the body region 3 source region 4 and the drain region 2 of the device, it is necessary to increase the channel length or increase the impurity doping concentration in the region where the channel is located, and at the same time reduce the doping of the drain region 2 concentration or increase the thickness of the drain region 2, thus causing an increase in the on-resistance and on-voltage drop between the source region 4 and the drain region 2 of the device

[0004] The traditional manufacturing method of super junction structure is realized by repeated injection annealing and epitaxial layer growth on the semiconductor material, which greatly improves the production cost of the device, the production cycle and the difficulty of process control.

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