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A kind of aluminum oxide thin film and preparation method and application thereof

A kind of aluminum oxide and thin film technology, which is applied in the direction of solid state chemical plating, metal material coating technology, transistors, etc., can solve the problems affecting the performance of thin film, and achieve the effect of increased moldability, excellent insulation performance and uniform thin film structure

Active Publication Date: 2016-06-08
TSINGHUA UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem solved by the present invention is that the solution method in the prior art prepares Al 2 o 3 In the thin film method, the high heat treatment temperature limits the application of the thin film, and directly lowering the heat treatment temperature will affect the performance of the thin film, and then provides a method for preparing an aluminum oxide thin film as a gate dielectric layer of a thin film transistor by a solution method

Method used

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  • A kind of aluminum oxide thin film and preparation method and application thereof
  • A kind of aluminum oxide thin film and preparation method and application thereof
  • A kind of aluminum oxide thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The preparation method of aluminum oxide thin film, comprises the following steps:

[0055] (1) Preparation of aluminum precursor solution

[0056] According to the thickness of alumina to be prepared, take a certain amount of aluminum precursor material - aluminum nitrate and stabilizer - monoethanolamine dissolved in propylene glycol monomethyl ether, stir well until the solution is clear, the stirring process is about 4 hours , to obtain a precursor solution, which is left to stand for use, wherein the molar ratio of aluminum nitrate and monoethanolamine added is: 1:3.

[0057] (2) Preparation of alumina semiconductor thin film

[0058] The reaction solution prepared in step (1) is coated on the coating surface by spin coating to form a film. The coating surface of the present invention can be a substrate or a semiconductor layer according to the structure of the transistor device. The coating in this embodiment The surface is a glass substrate. Under the air atmo...

Embodiment 1-1

[0072] The preparation method of aluminum oxide thin film, comprises the following steps:

[0073] (1) Preparation of aluminum precursor solution

[0074] Same as Example 1

[0075] (2) Preparation of alumina semiconductor thin film

[0076] The heat treatment program is to start heating at 200°C, raise the temperature at a rate of 60°C / min, and raise the temperature to a predetermined temperature of 400°C, continue heat treatment for at least 30 minutes, and cool naturally to room temperature. The remaining steps are the same as implementation 1.

[0077] A thin film transistor is prepared, comprising the following steps:

[0078] With embodiment 1.

[0079] Aluminum oxide thin film performance test results:

[0080] The 80nm aluminum oxide thin film prepared by spin coating method was used to measure its morphology (AFM image, the side length is 5 microns). Such as Figure 4 shown. The surface of the film is relatively flat, the roughness has increased, and there are...

Embodiment 1-2

[0087] The preparation method of aluminum oxide thin film, comprises the following steps:

[0088] Monoethanolamine and butanediol monomethyl ether are used as stabilizers, and the molar ratio of aluminum nitrate to monoethanolamine and butanediol monomethyl ether is 1:2:1. The remaining steps are the same as implementation 1.

[0089] A thin film transistor is prepared, comprising the following steps:

[0090] With embodiment 1.

[0091] Aluminum oxide thin film performance test results:

[0092] The 80nm aluminum oxide thin film prepared by spin coating method was used to measure its morphology (AFM image, the side length is 5 microns). The characterization parameters are as follows:

[0093] Scanning area: 5μm×5μm

[0094] Film valley value (P-V value) is 2.1nm

[0095] The root mean square roughness value (RMS value) is 0.11nm

[0096] Using the frequency-capacitance method, the dielectric constant is measured and calculated on an impedance meter to obtain a dielect...

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Abstract

The invention discloses a preparation method of an alumina thin film in the field of a thin film transistor. The preparation method comprises the following steps of: preparing aluminium precursor solution, i.e., dissolving a precursor material containing aluminium metal ions and a stabilizer in solution and sufficiently stirring to sufficiently dissolve the precursor material and the stabilizer to obtain the precursor solution; and preparing the alumina thin film, i.e., coating the prepared reaction solution on a coating surface to form a film and carrying out heat treatment program to obtain the alumina thin film. The invention also relates to the alumina thin film prepared by the preparation method and application of the alumina thin film in the transistor. The application comprises the thin film transistor of the alumina thin film and a preparation method of the thin film transistor. According to the preparation method of the alumina thin film, which is disclosed by the invention, by adding a right amount of stabilizer for stabilizing an alumina precursor material, a metal organic complex is formed by the precursor material of aluminium through the coordination dissolution reaction; the complex can be well dissolved in the solution and has low thermal decomposition temperature; and the heat treatment temperature in the preparing process is reduced.

Description

technical field [0001] The invention relates to the field of thin film transistors, in particular to a method for preparing an aluminum oxide film used as a gate dielectric of the thin film transistor, the aluminum oxide film prepared by the preparation method, and a thin film transistor using the aluminum oxide film. Background technique [0002] The phenomenon that the conductivity of a semiconductor varies with an electric field is usually called the "field effect". A thin film transistor (TFT) is a field effect transistor produced by depositing a thin film semiconductor on an insulating substrate instead of the commonly used single crystal phase semiconductor. Thin film transistors do not use a single crystal substrate and can be fabricated in a large area, so they have been widely used in the field of large-area electronic devices such as flat panel displays. figure 1 It is a schematic diagram of the structure of a common thin film transistor device. [0003] With the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08H01L21/28H01L29/786
Inventor 邱勇赵云龙段炼张云阁
Owner TSINGHUA UNIV
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