Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus

A technology for spectral purity and lithography equipment, applied in the field of spectral purity filters, which can solve problems such as image quality deterioration, reflective coating oxidation, and reflectivity reduction.

Inactive Publication Date: 2012-11-21
ASML NETHERLANDS BV
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, the resist is sensitive to out-of-band wavelengths, so image quality may be degraded
Second, unwanted radiation, especially 10.6 μm radiation in LPP sources leads to unwanted heating of masks, wafers and optics
Such high temperatures in an oxidizing environment can oxidize the reflective coating, which reduces its reflectivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus
  • Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus
  • Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The apparatus includes: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation); a support structure (e.g., a mask table) MT configured for supporting a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to precisely position the patterning device according to determined parameters; a substrate table (e.g. a wafer table) WT configured to hold a substrate ( Such as a resist-coated wafer) W, connected to a second positioning device PW configured to precisely position the substrate according to determined parameters; and a projection system (such as a refractive projection lens system) PS, the projection The system PS is configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target por...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A spectral purity filter includes a substrate, a plurality of apertures through the substrate, and a plurality of walls. The walls define the plurality of apertures through the substrate. The spectral purity filter also includes a first layer formed on the substrate to reflect radiation of a first wavelength, and a second layer formed on the first layer to prevent oxidation of the first layer. The apertures are constructed and arranged to be able to transmit at least a portion of radiation of a second wavelength therethrough.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 242,987, filed September 16, 2009, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to spectral purity filters, lithographic apparatus comprising such spectral purity filters, methods for manufacturing spectral purity filters and methods of manufacturing devices using lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G21K1/06G02B5/20
CPCG03F7/70575G03F7/70958G03F7/70941G03F7/70191H01L21/0274
Inventor A·亚库宁M·范卡朋V·季莫什科夫
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products