Preparation method for pyroelectric thick film detector with silicon cup groove structure

Abstract

The invention discloses a pyroelectric thick film detector with a silicon cup groove structure, and belongs to the technical field of electronic materials and components. The pyroelectric thick film detector with the silicon cup groove structure comprises a silicon substrate, a bottom electrode and an upper electrode, wherein the upper surface of the silicon substrate is provided with a groove; a pyroelectric thick film material is filled in the groove; the bottom electrode is led out through the side wall of the groove; and the included angle between the upper surface of the silicon substrate and the side wall of the groove provided with the bottom electrode is an obtuse angle. The pyroelectric thick film detector with the silicon cup groove structure is favorable for improving the quality of a thick film and the yield of detectors, so that high performance is realized by the pyroelectric thick film detector.

Description

technical field [0001] The invention relates to a manufacturing process of a pyroelectric infrared detector, in particular to a method for preparing a pyroelectric thick-film detector with a silicon cup groove structure, and belongs to the technical field of electronic materials and components. Background technique [0002] Pyroelectric infrared detectors work by using the pyroelectric effect of pyroelectric materials. When the pyroelectric material is in a constant temperature environment lower than the Curie temperature, its self-polarized charge density remains unchanged, and these charges are neutralized by charged ions in the air; when infrared radiation enters the pyroelectric material and is absorbed by the material, As the temperature of the material increases, the self-polarization intensity decreases, that is, the surface charge density decreases. In this way, excess neutralization charges exist on the surface of the pyroelectric material, and these charges are ou...

AI Technical Summary

Problems solved by technology

First of all, thick film materials have high sintering temperature and poor material properties.

Because materials with excellent performance can be prepared by adjusting the components, many phases are added when preparing thick film materials, and uneven mixing and poor density of materials will lead to high sintering temperatures and poor performance of the obtained materials

Second and most serious flaw: thick film materials are prone to cracking

In order to obtain a thick film with a high surface smoothness, the thick film material must be subjected to isostatic pressing, and the thick film will bear a certain pressure during isostatic pressing, because the bottom of the thick film is supported by a barrier material to balance the downward pressure. pressure, but there is no support on the side of the thick film, the force of the thick film with uneven surface will be unbalanced, and the side will bear the outward tension. In addition, if the prepared thick film material is mixed unevenly, there will be uneven Uniform porosity and gaps, cracking occurs easily after thick film is subjected to pressure

Cracking seriously damages the quality of the thick film, and is also not conducive to the preparation of the upper electrode, greatly reducing the yield of infrared detectors

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