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Method for preparing GaN film material

A thin-film material and thin-film technology, applied in the field of preparing GaN thin-film materials, can solve problems such as performance degradation of GaN-based materials

Active Publication Date: 2012-12-19
NANJING UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The presence of stress will cause the performance of GaN-based materials to decrease

Method used

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  • Method for preparing GaN film material
  • Method for preparing GaN film material

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Embodiment Construction

[0017] The method and technique of the present invention comprise several parts: physical vapor deposition of metal Ni thin film on GaN / sapphire composite substrate; atmosphere annealing treatment of metal Ni thin film; Inductively coupled plasma etching GaN / sapphire composite substrate; GaN thin film HVPE regrowth.

[0018] The thickness of the metal Ni film and the size of the Ni particles after annealing depend on the length and size of the GaN nanostructure. Thicker Ni films and larger Ni particles help to obtain GaN nanostructures with longer and thicker vertical and lateral dimensions.

[0019] In one of the technical implementation modes of the present invention, preparing a low-stress GaN thin film includes the following steps:

[0020] 1. Cleaning and processing of GaN / sapphire composite substrate.

[0021] 2. The GaN / sapphire composite substrate is placed in the reaction chamber of the physical vapor deposition device, and the evaporation of the metal Ni film can b...

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Abstract

The invention relates to a method for preparing a GaN film material, which comprises the following steps: evaporating a metal nickel(Ni)film on a GaN / sapphire composite substrate, annealing to obtain the nano Ni paticles, then using an inductively coupled plasma etching (ICP) method to etch GaN on the GaN / sapphire composite substrate which is uncovered by Ni and forming the GaN / sapphire composite substrate with a nano structure. The hydride vapor phase epitaxy (HVPE) growth of GaN is carried out on the nano structure composite substrate to obtain the GaN film with low stress and high quality or the self-supporting GaN substrate material. The method of the invention can obtain the GaN film with low stress and high quality.

Description

technical field [0001] The invention relates to a method and process for reducing the stress in GaN thin film material grown by hydride vapor phase epitaxy (HVPE). Especially the method of high-quality low-stress GaN thin film. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It is used to manufacture light-emitting de...

Claims

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Application Information

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IPC IPC(8): C30B25/20C30B25/16
CPCH01L21/00C30B29/406H01L21/3081C30B25/186H01L21/30621
Inventor 修向前华雪梅林增钦张士英谢自力张荣韩平陆海顾书林施毅郑有炓
Owner NANJING UNIV