Insulated gate bipolar transistor terminal and producing method thereof

A bipolar transistor and insulated gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing chip manufacturing costs, large chips, and large total chip area, so as to reduce the total area, Reduce the area and eliminate the effect of electric field concentration

Active Publication Date: 2015-05-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the IGBT device with the field limiting ring as the terminal protection structure, the area of ​​the field limiting ring accounts for a large proportion of the total area of ​​the chip, which makes the total area of ​​the chip larger and increases the manufacturing cost of the chip.

Method used

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  • Insulated gate bipolar transistor terminal and producing method thereof
  • Insulated gate bipolar transistor terminal and producing method thereof
  • Insulated gate bipolar transistor terminal and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] refer to figure 2 , figure 2 A schematic structural diagram of an IGBT terminal provided by an embodiment of the present invention, the IGBT terminal includes: a drift region 302; a terminal protection structure 309 located in the front of the drift region 302; within the collector region 303 . The drift region 302 is a lightly doped semiconductor of the first conductivity type, and the collector region 303 is a heavily doped semiconductor of the second conductivity type. In this embodiment, the doping type of the semiconductor of the first conductivity type is opposite to that of the semiconductor of the second conductivity type.

[0037] The terminal protection structure 309 includes: a voltage division protection area 305 of the inner ring and a cut-off ring 306 of the outer ring; wherein, the voltage division protection area 305 of the inner ring includes: a main junction 307 and a voltage division groove 310, the The voltage dividing trench 310 is located on t...

Embodiment 2

[0044] In the background art, the IGBT terminal protection structure is described in detail as a field-limiting ring (FLR) structure. In addition to the disadvantage of occupying a large proportion of the total chip area, the field-limiting ring structure is also extremely vulnerable to interface instability. and oxide layer ( figure 1 Part of the interfacial charge on the midlimit ring, which in turn affects the breakdown voltage of the device and the reliability under high voltage.

[0045] Furthermore, in addition to the field limiting ring structure being susceptible to surface charges, the Junction Termination Extension (JTE) structure also suffers from this disadvantage. refer to image 3 , image 3 is a schematic diagram of a junction terminal extension (JTE) structure in a conventional IGBT device, showing a heavily doped main junction 201 and a lightly doped junction near the main junction 201 formed by ion implantation or diffusion process Partial pressure area 202 ...

Embodiment 3

[0053] The terminal of the IGBT provided by the present invention has been described in detail above, and the manufacturing method of the terminal will be described in detail below.

[0054] refer to Figure 5 , Figure 5 It is a schematic flowchart of a method for manufacturing an insulated gate bipolar transistor terminal provided by an embodiment of the present invention. The method specifically includes the following steps:

[0055] Step S1: using a lightly doped silicon substrate as a drift region.

[0056] The existing lightly doped silicon substrate is used as the drift region for manufacturing the IGBT terminal, and the subsequent process steps are all realized in the silicon substrate or on the silicon substrate.

[0057] Step S2: forming a terminal protection structure in the drift region; wherein, the terminal protection structure includes: a main junction, a stop ring, and a voltage dividing trench between the main junction and the stop ring.

[0058] This step ...

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PUM

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Abstract

The invention discloses an insulated gate bipolar transistor terminal and a producing method thereof. The insulated gate bipolar transistor terminal comprises a drift region and a terminal protection structure which is located in the drift region, wherein the terminal protection structure comprises a main node, a stop ring and a voltage division groove which is located between the main node and the stop ring. According to the insulated gate bipolar transistor terminal, the voltage division groove is formed between the main node and the stop ring and used for cutting off the node bending of a curved surface of the main node, so that the concentration of an electric field is eliminated and the breakdown voltage is improved. At the same time, the voltage division groove exists in the drift region in a groove form; and compared with a field limiting ring structure, the structure has the advantages of greatly decreasing the area of the terminal protection structure, decreasing the total area of a chip and reducing the production cost of the chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing technology, and more specifically, to an insulated gate bipolar transistor terminal and a manufacturing method thereof. Background technique [0002] Insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, IGBT) is a new type of high-power device, which combines the gate voltage control characteristics of field effect transistors (MOSFET) and the low on-resistance characteristics of bipolar transistors, which improves the device Withstand voltage and on-resistance mutually restrained, it has the advantages of high voltage, high current, high frequency, high power integration density, large input impedance, small on-resistance, low switching loss, etc. It is widely used in frequency conversion household appliances, industrial control, electric and Hybrid electric vehicles, new energy, smart grid and many other fields have obtained a wide range of application ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/739H01L21/331
Inventor 朱阳军田晓丽卢烁今吴振兴
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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