Preparation method of carbon nano-tube vertical array structure with heterojunction

A carbon nanotube and array structure technology is applied in the field of controllable preparation of a vertical array structure of heterostructured carbon nanotubes, and achieves the effects of uniform structure change, precise structure and obvious structure change.
CN102862974AActive Publication Date: 2013-01-09INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Publication Date
2013-01-09

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Abstract

The invention relates to the field of controllable preparation of a carbon nano-tube vertical array structure with heterojunction, and in particular relates to a controllable preparation method of a carbon nano-tube vertical array structure with heterojunction carbon (nitrogen doped / undoped). The heterojunction also means a molecular inner segment, which is formed by two different types of carbon nano-tubes, namely nitrogen doped and undoped carbon nano-tubes on the junction. Iron deposited on a Si substrate or SiOX / Si substrate is used as a catalyst, a chemical vapor deposition method is utilized, and a nitrogen source is added in good time in a carbon nano-tube vertical array growing process to prepare a nitrogen doped / undoped carbon nano-tube heterojunction vertical array, and the length, number, structure and the like of the heterojunction can be effectively and accurately controlled. The controllable preparation method of the heterojunction vertical array structure provided by the invention is simple, has a remarkable heterojunction structure, a narrow heterojunction transition area and an uniform structure, and is expected to be applied to the fields of diodes, nano-switches, amplifiers and the like.
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Description

Technical field:

[0001] The invention relates to the field of controllable preparation of a heterostructured carbon nanotube vertical array structure, in particular to a controllable preparation method of a heterostructured carbon (nitrogen-doped / undoped) carbon nanotube vertical array structure. Background technique:

[0002] The unique structural characteristics of carbon nanotubes (one-dimensional structure, large aspect ratio, hollow lumen, large specific surface area, etc.) and excellent mechanical, electrical, optical, thermal and chemical properties make them suitable for composite materials, nanoelectronics and optoelectronic devices. , sensors, energy and catalysis and other fields have a wide range of application prospects.

[0003] Two different structures or different types of carbon nanotubes can form a heterojunction at the junction. There are many types of carbon nanotube heterojunctions, including single-walled carbon nanotubes (SWNTs) / SWCNTs with different ...

Claims

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