Preparation method of carbon nano-tube vertical array structure with heterojunction
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INST OF METAL RESEARCH - CHINESE ACAD OF SCI
- Publication Date
- 2013-01-09
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
Technical field:
[0001] The invention relates to the field of controllable preparation of a heterostructured carbon nanotube vertical array structure, in particular to a controllable preparation method of a heterostructured carbon (nitrogen-doped / undoped) carbon nanotube vertical array structure. Background technique:
[0002] The unique structural characteristics of carbon nanotubes (one-dimensional structure, large aspect ratio, hollow lumen, large specific surface area, etc.) and excellent mechanical, electrical, optical, thermal and chemical properties make them suitable for composite materials, nanoelectronics and optoelectronic devices. , sensors, energy and catalysis and other fields have a wide range of application prospects.
[0003] Two different structures or different types of carbon nanotubes can form a heterojunction at the junction. There are many types of carbon nanotube heterojunctions, including single-walled carbon nanotubes (SWNTs) / SWCNTs with different ...