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A preparation method of carbon nanotube vertical array structure with heterojunction

A carbon nanotube and array structure technology, applied in the field of controllable preparation of heterojunction carbon nanotube vertical array structure, to achieve the effects of obvious structural changes, uniform structural changes, and precise structures

Active Publication Date: 2014-10-29
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main problem at present is: how to prepare vertical arrays of carbon nanotubes containing heterojunctions, and how to effectively control the length, structure and composition of heterojunctions

Method used

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  • A preparation method of carbon nanotube vertical array structure with heterojunction
  • A preparation method of carbon nanotube vertical array structure with heterojunction
  • A preparation method of carbon nanotube vertical array structure with heterojunction

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preparation example Construction

[0024] The invention provides a method for preparing a vertical array structure of heterojunction (nitrogen-doped / undoped) carbon nanotubes, which is prepared by chemical vapor deposition, including the following steps:

[0025] (1) Cleaning of the growth substrate: first place the Si substrate or SiO X / Si substrate (Si substrate surface covered with a layer of amorphous SiO X ) in ethanol, acetone, and ethanol, followed by ultrasonic cleaning for 10 minutes, then rinsed with ethanol, and washed with high-purity N 2 Dry the substrate surface with air.

[0026] (2) Catalyst film preparation by ion sputtering: use ionized Ar ions to bombard the surface of the target to deposit a film on the substrate, and the substrate is at room temperature during the coating process. The coating speed is adjustable, and the film thickness is measured by the quartz sensor of the equipment.

[0027] (3) Raise the temperature of the chemical vapor deposition furnace to the catalyst pretreatme...

Embodiment 1

[0030] Such as figure 1 As shown, the experimental steps for preparing the vertical array structure of heterojunction carbon nanotubes are as follows: using the ion beam assisted deposition method on the cleaned SiO 2 / Si substrate deposited a layer of 20nm thick A1 2 o 3 barrier layer, and then deposited a 2 nm thick Fe film for the preparation of Fe catalyst nanoparticles. Fe catalyst film in Ar / H 2 Under the atmosphere, heat treatment at 750° C. for 10 minutes reduces, agglomerates to form nanoparticles for subsequent growth of carbon nanotubes. C into 80sccm 2 h 4 As a carbon source to grow a vertical array of carbon nanotubes, after growing at 900°C for 5 minutes, open the Ar gas valve carrying acetonitrile, and use 10ml / min of argon to carry acetonitrile at a temperature of 30°C into the reaction zone, nitrogen-doped carbon An array of nanotubes begins to grow, and a heterojunction forms at the interface of the two carbon nanotubes. After 5 min of growth at 900 °...

Embodiment 2

[0032] Cleaned SiO by ion beam assisted deposition 2 / Si substrate deposited a layer of 20nm thick Al 2 o 3 barrier layer, and then deposited a 3 nm thick Fe film for the preparation of Fe catalyst nanoparticles. Fe catalyst film in Ar / H 2 Under the atmosphere, heat treatment at 700° C. for 15 minutes reduces, agglomerates to form nanoparticles for subsequent growth of carbon nanotubes. Push the catalyst back to the low temperature zone quickly, raise the temperature of the reaction furnace to 850°C, push the catalyst to the reaction zone, and inject 50 sccm of C 2 h 4 As a carbon source to grow vertical arrays of carbon nanotubes; after 10 minutes of growth, the C 2 h 4 The flow rate is reduced to 0sccm, the Ar gas valve carrying acetonitrile is opened, and acetonitrile with a temperature of 50°C is carried by 30ml / min argon gas into the reaction zone, and the nitrogen-doped carbon nanotube array begins to grow, and the heterojunction between the two carbon formed at t...

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Abstract

The invention relates to the field of controllable preparation of a carbon nano-tube vertical array structure with heterojunction, and in particular relates to a controllable preparation method of a carbon nano-tube vertical array structure with heterojunction carbon (nitrogen doped / undoped). The heterojunction also means a molecular inner segment, which is formed by two different types of carbon nano-tubes, namely nitrogen doped and undoped carbon nano-tubes on the junction. Iron deposited on a Si substrate or SiOX / Si substrate is used as a catalyst, a chemical vapor deposition method is utilized, and a nitrogen source is added in good time in a carbon nano-tube vertical array growing process to prepare a nitrogen doped / undoped carbon nano-tube heterojunction vertical array, and the length, number, structure and the like of the heterojunction can be effectively and accurately controlled. The controllable preparation method of the heterojunction vertical array structure provided by the invention is simple, has a remarkable heterojunction structure, a narrow heterojunction transition area and an uniform structure, and is expected to be applied to the fields of diodes, nano-switches, amplifiers and the like.

Description

Technical field: [0001] The invention relates to the field of controllable preparation of heterojunction carbon nanotube vertical array structure, in particular to a controllable preparation method of carbon nanotube vertical array structure with heterojunction carbon (nitrogen-doped / undoped). Background technique: [0002] The unique structural characteristics of carbon nanotubes (one-dimensional structure, large aspect ratio, hollow lumen, large specific surface area, etc.) and excellent mechanical, electrical, optical, thermal and chemical properties make them widely used in composite materials, nanoelectronics and optoelectronic devices. , sensors, energy and catalysis and other fields have broad application prospects. [0003] Two different structures or different types of carbon nanotubes can form a heterojunction at the junction. There are many types of carbon nanotube heterojunctions, including single-walled carbon nanotubes (SWNT) / SWCNTs with different chiralities,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02B82Y40/00C01B32/16
Inventor 侯鹏翔宋曼刘畅成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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