A method of making non-absorbing window of Gaas-based semiconductor laser

A laser and semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser parts, etc., can solve the problems of limited application, low yield, increased process cost and complexity, etc., to suppress output light absorption, stabilize emission wavelength, reduce Effect of Effective Refractive Index

Inactive Publication Date: 2018-11-02
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

However, in the actual operation of this method, it is necessary to meet the requirements of depositing films with different characteristics in specific areas, and at the same time, it is necessary to consider the removal of the film after annealing and the stripe etching of the laser, so the epitaxial wafer has to be overlaid multiple times; in addition, Commonly used TiO 2 The thin film needs to be removed by dry etching technology, which greatly increases the cost and complexity of the process, and the yield is low, which seriously limits the practical application of this technology in this field

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  • A method of making non-absorbing window of Gaas-based semiconductor laser
  • A method of making non-absorbing window of Gaas-based semiconductor laser

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Embodiment Construction

[0010] 1. After cleaning the laser epitaxial wafer, use the method of electron beam evaporation to evaporate SiO with a thickness of 0.5-1.2 microns 2 .

[0011] 2. After the photoresist-coated epitaxial wafer is exposed and developed by photolithography, the SiO on the region (1) 2 are protected by photoresist, while other regions on the SiO 2 bare.

[0012] 3. Use hydrofluoric acid solution (the volume ratio of hydrofluoric acid to water is 1:20) and phosphoric acid solution to corrode the exposed SiO successively 2 And the lower GaAs ohmic contact layer, etch out the laser bar structure.

[0013] 4. Evaporate TiO with a thickness of 0.7-1.8 microns on the surface of the laser epitaxial wafer by electron beam evaporation 2 , followed by hot acetone combined with ultrasonic process to remove the photoresist and the TiO on it 2 , such that region (1) consists of SiO 2 +Photoresist+TiO 2 The structure becomes monolayer SiO 2 structure, while regions (2), (3) are mono...

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Abstract

The invention discloses a simple method for increasing COD (chemical oxygen demand) threshold of a semiconductor laser, belongs to technical field of semiconductor photoelectric devices and aims to overcome the difficulty in improving COD resistance capacity of the devices in the prior art and control the processing difficulty and cost at a low level. The simple method for increasing the COD threshold of the semiconductor laser includes manufacturing non-absorbent windows of the laser by etching once on the basis of the principle of quantum well intermixing, and completing etching of strip structure of the laser, selective SiO2 / TiO2 film evaporation and preparation of an electric insulating layer according to electronic beam evaporation and conventional wet-process etching technologies. The simple method is applicable to GaAs-based aluminum-free semiconductor lasers, simplifies manufacturing process and can increase output power of the semiconductor laser.

Description

technical field [0001] The invention relates to a method for making a non-absorption window of a GaAs-based semiconductor laser, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Catastrophic optical mirror damage (COD) is one of the main reasons that limit the increase in optical output power of semiconductor lasers. Since the cavity surface of the laser is located at the edge of the heat sink, the heat dissipation is poor. Under the condition of high optical power density, the temperature of the cavity surface rises rapidly, which causes the band gap of the material at the light output position of the cavity surface to shrink, resulting in an increase in its absorption of light and a sharp temperature increase. The sharp increase in temperature in turn increases its light absorption, and this vicious cycle continues, causing catastrophic optical mirror damage to the laser. The method of adopting the non-absorbing windo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/028
Inventor 周路王云华薄报学高欣乔忠良贾宝山白端元
Owner CHANGCHUN UNIV OF SCI & TECH
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