Method for casting ingot of pseudo-single crystal through large-sized crucible
A kind of single-crystal-like, large-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of small proportion of large grains, defects and impurities in silicon blocks, and achieve increased minority carrier lifetime, The effect of increasing the battery conversion efficiency and increasing the amount of material
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Embodiment 1
[0059] A method for casting an ingot-like single crystal using a large-size crucible, comprising the following steps:
[0060] (a) Select a crucible with an outer diameter greater than 878mm and an inner diameter greater than 840mm as a carrier, and place 25 square silicon blocks with a cross-section of 156mm×156mm and a thickness of 25mm in the central part of the crucible, so that the square silicon blocks are surrounded by The inner walls of the crucible are equally spaced;
[0061] (b) Heat the crucible, select the heating mode as the power control mode, and select the pressure mode as the vacuum mode. Because the temperature control in the low temperature stage of the ingot furnace heater is unstable, it is difficult to control the temperature accurately, so the heating mode is selected as the power control mode; at the same time, because there may be some moisture in the furnace or on the silicon material at the beginning, vacuum is used as the pressure mode, it is conv...
Embodiment 2
[0104] This embodiment is basically the same as Embodiment 1, except that the power is set to 13kw in step (b1), and other settings remain unchanged.
Embodiment 3
[0106] This embodiment is basically the same as Embodiment 1, except that the power is set to 15kw in step (b1), and other settings remain unchanged.
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