Method for manufacturing flexible pyramid array GaN-based semiconductor light-emitting diode

A technology of light-emitting diodes and pyramids, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as reliability aging

Inactive Publication Date: 2013-03-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, these new materials still have problems such as reliability and aging under hig

Method used

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  • Method for manufacturing flexible pyramid array GaN-based semiconductor light-emitting diode
  • Method for manufacturing flexible pyramid array GaN-based semiconductor light-emitting diode
  • Method for manufacturing flexible pyramid array GaN-based semiconductor light-emitting diode

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Embodiment Construction

[0021] The key of the present invention is to wet-etch the stripped nitrogen-polar GaN layer into a separated micron-scale pyramid vertical structure LED array, separate the prepared graphene from the mother substrate, and deposit it on the pyramid-etched vertical structure LED array. On, a transparent conductive film is formed. The flexible split pyramid array vertical structure LED produced by this method can effectively improve the light efficiency of the LED and reduce the reverse leakage current of the LED. The manufactured LED device can be bent within a certain mechanical strength without any impact on the entire device structure, making flexible LED devices possible.

[0022] see Figure 1-Figure 6 As shown, the present invention provides a kind of method of making flexible pyramid array GaN-based semiconductor light-emitting diode, comprising:

[0023] Step 1: Select an LED epitaxial structure 10 (see figure 2 ), including a sapphire substrate 1 and an unintention...

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Abstract

A method for manufacturing a flexible pyramid array GaN-based semiconductor light-emitting diode comprises the following steps: selecting an epitaxial structure, wherein the epitaxial structure comprises a sapphire substrate, as well as an unpremeditated doped gallium nitride layer, an n type GaN layer, a quantum well layer and a p type GaN layer which grow on the sapphire substrate sequentially; preparing a metal layer on the p type GaN layer; transferring a substrate on the metal layer; separating the sapphire substrate in the epitaxial structure from the unpremeditated doped gallium nitride layer; corroding, namely corroding the unpremeditated doped gallium nitride layer downwards to the metal layer to form a separated pyramid-shaped array; coating an insulating material on the side of the pyramid-shaped array; performing plasmid processing on the coated insulating material, so that the unpremeditated doped gallium nitride layer at the upper end of the pyramid-shaped array is exposed; depositing one layer of transparent conductive film on the coated insulating material and the unpremeditated doped gallium nitride layer; and depositing a graphic metal electrode on the transparent conductive film by a photoetching method to finish preparation.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a flexible pyramid array GaN-based semiconductor light-emitting diode. Background technique [0002] In terms of structure, GaN-based LEDs currently mainly have three types: front-mount structure, flip-chip structure, and vertical structure. Among them, the vertical structure LED has the advantages of good heat dissipation, more uniform current distribution, and more reliability. The transparent conductive layer in the LED structure mainly uses ITO as its current spreading layer, but due to technical and economical reasons such as indium being a rare precious metal, ITO preparation equipment is expensive, and fragile, the application is limited. Therefore, it is necessary to look for new transparent conductive layers. Materials matter. New transparent and conductive new materials represented by graphene and carbon nanotubes have become an excel...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 程滟汪炼成刘志强伊晓燕王国宏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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