Method for washing high-resistivity and low-resistivity silicon materials

Abstract

The invention discloses a method for washing high-resistivity and low-resistivity silicon materials. The method comprises the following steps of: soaking the silicon material into hydrofluoric acid or a mixed solution of hydrofluoric acid and ammonium fluoride, after soaking, taking out the silicon material and washing the silicon material to be neutral with water; preparing the mixed solution of hydrofluoric acid and hydrogen nitrate, adding the silicon material into a plastic container, adding the prepared mixed solution, after reaction, lightly swashing the silicon material with clean water, enabling the low-resistivity silicon material to float on water surface, thereby realizing separation of high-resistivity silicon material and low-resistivity silicon material; mixing the mixed solution of hydrofluoric acid, hydrogen nitrate and glacial acetic acid, adding the separated high-resistivity material into the mixed solution, stirring and adding hydrogen peroxide at intervals, then, taking out the material and washing the material to be neutral with water; adding the high-resistivity material into an alkali wash basin, adding solid sodium hydroxide, adding a sodium hydroxide solution simultaneously, stirring for reaction, then, washing the alkali liquor away by the clean water; soaking the high-resistivity material into electronic grade hydrochloric acid, after soaking, washing the high-resistivity material to be clean with pure water; and finally, executing ultrasonic treatment with pure water, and then, fishing out the high-resistivity material, and drying.

Description

technical field [0001] The invention relates to the technical field of solar silicon industry cleaning and processing, in particular to a method for cleaning silicon materials containing both high and low resistance. Background technique [0002] The traditional processing method is to manually test the resistivity to achieve the purpose of sorting (such as multimeter, electric pen, etc.). For the silicon material that is too small to be processed by the traditional method, it is not only time-consuming, the output cannot be increased, but there are also human factors. Uncertainty leads to the failure to fully select low resistance, which is not good for the materials used in subsequent production. Contents of the invention [0003] The object of the present invention is to provide a method for cleaning silicon materials containing high and low resistance while effectively removing the low resistance materials in the small-sized high and low resistance mixed silicon materi...

AI Technical Summary

Problems solved by technology

[0002] The traditional processing method is to manually test the resistivity to achieve the purpose of sorting (such as multimeter, electric pen, etc.). For the silicon material that is too small to be processed by the traditional method, it is not only time-consuming, the output cannot be increased, but there are also human factors. Uncertainty, resulting in the failure to fully select the low resistance, which is not good for the materials used in the next production