The invention discloses a method for washing high-resistivity and low-resistivity
silicon materials. The method comprises the following steps of: soaking the
silicon material into
hydrofluoric acid or a
mixed solution of
hydrofluoric acid and
ammonium fluoride, after soaking, taking out the
silicon material and washing the silicon material to be neutral with water; preparing the
mixed solution of
hydrofluoric acid and
hydrogen nitrate, adding the silicon material into a plastic container, adding the prepared
mixed solution, after reaction, lightly swashing the silicon material with
clean water, enabling the low-resistivity silicon material to float on water surface, thereby realizing separation of high-resistivity silicon material and low-resistivity silicon material; mixing the mixed solution of hydrofluoric acid,
hydrogen nitrate and glacial
acetic acid, adding the separated high-resistivity material into the mixed solution, stirring and adding
hydrogen peroxide at intervals, then, taking out the material and washing the material to be neutral with water; adding the high-resistivity material into an alkali wash basin, adding
solid sodium hydroxide, adding a
sodium hydroxide solution simultaneously, stirring for reaction, then, washing the alkali liquor away by the
clean water; soaking the high-resistivity material into electronic grade
hydrochloric acid, after soaking, washing the high-resistivity material to be clean with pure water; and finally, executing ultrasonic treatment with pure water, and then,
fishing out the high-resistivity material, and
drying.