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Substrate processing composition

A substrate treatment and condensate technology, which is applied in the direction of detergent composition, soap detergent composition, surface active non-soap compound and cleaning composition, etc., can solve the problem of inability to remove metal impurities, and achieve shortening of the cleaning process and efficient treatment The effect of increasing quantity and reducing cost

Active Publication Date: 2015-05-27
广东硕成科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually after etching, it is removed by cleaning with an acid such as dilute hydrofluoric acid, but especially in low-resistance substrates with a high concentration of boron and the like, Cu and Ni are easy to diffuse inside, and Ni in sodium hydroxide or hydroxide Potassium is used at a temperature of around 80°C to cause diffusion, so surface cleaning with acid cannot remove internally diffused metal impurities, which has become a problem

Method used

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Examples

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Effect test

Embodiment 1

[0010] A substrate treatment solution, consisting of the following components by weight, 15 parts of sodium dihydrogen phosphate, 10 parts of ethyl glycine, 5 parts of sodium tripolyphosphate, 11 parts of glucoheptonic acid, ethylene oxide and ethylene glycol 7 parts of condensate, 8 parts of benzyl chloride, 17 parts of potassium hydroxide, 25 parts of condensate of propylene oxide and propylene glycol, 27 parts of tartaric acid, 14 parts of borate of alkali or alkaline earth metal, 16 parts of carbonate, hydroxide 21 parts, 14 parts of phosphate, 20 parts of tetramethylammonium hydroxide.

Embodiment 2

[0012] A substrate treatment solution, consisting of the following components in parts by weight: 20 parts of sodium dihydrogen phosphate, 15 parts of ethyl glycine, 10 parts of sodium tripolyphosphate, 14 parts of glucoheptonic acid, ethylene oxide and ethylene glycol condensation 12 parts of benzyl chloride, 16 parts of benzyl chloride, 20 parts of potassium hydroxide, 30 parts of condensate of propylene oxide and propylene glycol, 38 parts of tartaric acid, 18 parts of alkali or alkaline earth metal borate, 19 parts of carbonate, 28 parts of hydroxide Parts, 17 parts of phosphate, 25 parts of tetramethylammonium hydroxide.

Embodiment 3

[0014] A substrate treatment solution, consisting of the following components in parts by weight: 18 parts of sodium dihydrogen phosphate, 13 parts of ethyl glycine, 7 parts of sodium tripolyphosphate, 13 parts of glucoheptonic acid, ethylene oxide and ethylene glycol condensation 9 parts of benzyl chloride, 14 parts of benzyl chloride, 18 parts of potassium hydroxide, 27 parts of condensate of propylene oxide and propylene glycol, 29 parts of tartaric acid, 15 parts of alkali or alkaline earth metal borate, 17 parts of carbonate, 25 parts of hydroxide Parts, 16 parts of phosphate, 21 parts of tetramethylammonium hydroxide.

[0015] By using the alkaline aqueous solution composition for substrate treatment of the present invention, silicon wafers, semiconductor substrates, glass substrates, etc. are etched or cleaned, effectively preventing the adsorption of metal impurities in the alkali component on the substrate, and effectively cleaning By removing the metal adsorbed on th...

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PUM

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Abstract

The invention relates to a substrate processing composition, which is composed of the following components in parts by weight: 15-20 parts of sodium dihydrogen phosphate, 10-15 parts of ethyl glycine, 5-10 parts of sodium tripolyphosphate, 11-14 parts of a glucoheptonic acid, 7-12 parts of vinylated oxygen / ethylene glycol condensation products, 8-16 parts of benzyl chloride, 17-20 parts of potassium hydroxide, 25-30 parts of propylene oxide / propylene glycol condensation products, 27-38 parts of a tartaric acid, 14-18 parts of alkali or alkaline-earth metal borates, 16-19 parts of carbonate, 21-28 parts of hydroxide, 14-17 parts of phosphate, and 20-25 parts of tetramethylammonium hydroxide. The substrate processing composition disclosed by the invention can effectively remove metals adsorbed on substrates through cleaning, therefore, the subsequent acidic cleaning can be omitted, so that the cleaning process is significantly shortened.

Description

technical field [0001] The present invention relates to a cleaning-removable substrate treatment composition. Background technique [0002] In the manufacturing process of silicon wafers for semiconductor manufacturing, when wafers are diced from silicon single crystal ingots and processed to a predetermined thickness, etching is performed with an alkali such as sodium hydroxide or potassium hydroxide in order to achieve uniform etching. At this time, a large amount of metal impurities in sodium hydroxide or potassium hydroxide will be adsorbed on the wafer surface. Usually after etching, it is removed by cleaning with an acid such as dilute hydrofluoric acid, but especially in low-resistance substrates with a high concentration of boron and the like, Cu and Ni are easy to diffuse inside, and Ni in sodium hydroxide or hydroxide Potassium, which is used at a temperature of around 80°C, causes diffusion, so surface cleaning with acid cannot remove internally diffused metal im...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D10/02
Inventor 宋亦健王祥松
Owner 广东硕成科技股份有限公司
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