Low dielectric, low expansion and low temperature co-fired ceramic material and preparation method thereof

Abstract

The invention relates to a low dielectric, low expansion and low temperature co-fired ceramic material and a preparation method thereof. The method comprises the steps of a, mixing (60-80)wt% of borosilicate glass powder with (20-40)wt% of spherical fused quartz micro powder to obtain low-temperature co-fired ceramic powder, b, adding a solvent, an adhesive agent, a plasticizer and a dispersing agent to the low temperature co-fired ceramic powder, obtaining casting slurry, and preparing the casting ceramic slurry into a green ceramic tape, and c, placing the green ceramic tape into an electric furnace for sintering to form the low temperature co-fired ceramic material. According to the low dielectric, low expansion and low temperature co-fired ceramic material and the preparation method thereof, a high-purity superfine spherical fused quartz material is added to representative borosilicate glass, so that the dielectric constant and the thermal expansion coefficient of an LTCC (low temperature co-fired ceramic) substrate material are reduced, and the low temperature sintering of the spherical fused quartz material is achieved. The prepared low temperature co-fired ceramic material has the dielectric constant of 5.1(1MHz) and the thermal expansion coefficient of 4.2*10<-6>K<-1>, and has a good application prospect.

Description

technical field [0001] The invention relates to the field of ceramic materials, in particular to a low-medium and low-expansion low-temperature co-fired ceramic material and a preparation method thereof. Background technique [0002] The electronic substrate is the carrier of the semiconductor chip package, carrying the support of electronic components and forming the base of the electronic circuit. Low-temperature co-fired multilayer ceramic substrates, as the fifth-generation assembly technology substrates, have attracted great attention from researchers at home and abroad, and have been widely used in the fields of aerospace, aviation, communications and large-scale computers. The development of microelectronics technology has put forward higher and higher requirements for electronic packaging substrate materials, including: low dielectric constant (ε r <9) to reduce the delay time of the signal in transmission and increase the transmission speed; the coefficient of t...

AI Technical Summary

Problems solved by technology

The representative of this system material is the product 951AT of Dupont Company of the United States, which is made of Al 2 o 3 Powder and lead borosilicate glass, its thermal expansion coefficient is 5.8×10 –6 / °C, which is closer to the thermal expansion coefficient of Si than FerroA6m, but due to the choice of Al 2 o 3 (ε r =9.8) As a ceramic filling phase, its dielectric constant is high: ε r =7.8, which limits its application in the high frequency field