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Silicate-based fluorescent material and synthetic method thereof

A fluorescent material and silicate technology, applied in the field of fluorescent materials and their synthesis, can solve the problems of luminous color change, lower luminous intensity, blue shift of emission spectrum, etc., achieve high luminous efficiency, increase luminous intensity, and good chemical stability Effect

Active Publication Date: 2013-04-03
HEFEI UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The solid-phase reaction synthesis method of adding flux is also called high-temperature solid-phase solution method. The flux is liquid at high temperature, and the molten flux covers the crystal grains for growth, but for (Sr,Ba) 3 SiO 5 :Eu 2+ , the addition of flux tends to lead to (Sr,Ba) 2 SiO 4 phase generation
(Sr,Ba) 2 SiO 4 The formation of the phase not only seriously reduces the luminous intensity, but also makes the emission spectrum blue-shift and the luminous color change.

Method used

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  • Silicate-based fluorescent material and synthetic method thereof
  • Silicate-based fluorescent material and synthetic method thereof
  • Silicate-based fluorescent material and synthetic method thereof

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Embodiment 1

[0046] The chemical formula of the fluorescent material in this embodiment is (Sr 0.99 Eu 0.01 ) 3 SiO 5 .

[0047] In this example, SrCO3 , SiO 2 and Eu 2 o 3 Raw materials, where SiO 2 It is a conventional micron powder. After being fully ground, put the mixed product into a corundum crucible, cover it and put it into a tube furnace, tighten the flange, and then pass H into the furnace. 2 / N 2 =5 / 95 reducing gas. The high-temperature furnace sintering system is as follows: firstly, the temperature is raised from room temperature to 600°C at 5°C / min, then the temperature is raised to 900°C at 4°C / min, and then the temperature is raised to 1300°C at 3°C / min. Cool down to 900°C at 4°C / min, then cool down to 600°C at 5°C / min, turn off the power, cool the sample to room temperature with the furnace, and finally turn off the reducing gas. After the samples were released from the furnace, they were ground and pulverized, and the emission spectrum and crystal structure of ...

Embodiment 2

[0049] The general chemical formula of the synthesized substance in this embodiment is (Sr 0.99 Eu 0.01 ) 3 SiO 5 .

[0050] This embodiment synthesizes five samples, wherein nano-SiO 2 The percentages of the total mass of silicon source materials are 0, 10%, 30%, 50% and 70%, respectively. According to the sample composition ratio shown in Table 1, the raw material SrCO 3 , nano-SiO 2 , conventional SiO 2 Micropowder and Eu 2 o 3 , then fully grind various raw materials, put the mixed product into a corundum crucible, and burn it at 1000°C for 2 hours in the atmosphere, grind the sample again after it comes out of the furnace, and then put the sample into the corundum crucible, cover it into a tube furnace at H 2 / N 2 Calcination at 1400°C for 4 hours under a reducing atmosphere of =25 / 75, until the furnace temperature is cooled to room temperature and the reducing gas is turned off. After the samples come out of the furnace, they are ground and pulverized, classif...

Embodiment 3

[0055] The general chemical formula of the synthesized substance in this embodiment is (Sr 0.99 Eu 0.01 ) 3 SiO 5 .

[0056] The preparation method of the present embodiment is the same as embodiment 2, and the difference is that in H 2 / N 2 Calcination at 1450°C for 4 hours under a reducing atmosphere of =25 / 75. The emission spectrum of the synthesized sample in this embodiment is as follows: Figure 4 shown. The luminous intensity of the sample varies with the nano-SiO 2 The luminescence intensity of the sample with the doping amount of 10% has been significantly improved compared with that of the undoped sample; when the SiO 2 When the dosage is 30%, the luminous intensity reaches the maximum, and its luminous intensity is 161% of the undoped sample; when nano-SiO 2 When the content increased to 50%, the luminous intensity decreased slightly; the luminous intensity of the two samples with doping amount of 50% and 70% was almost the same. This practice synthesizes ...

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Abstract

The invention discloses a silicate-based fluorescent material and a synthetic method thereof. The chemical formula of the silicate-based fluorescent material is (Ae1-xEux)3SiO5, wherein Ae is one or more of Sr<2+>, Ba<2+>, Ca<2+>, Zn<2+>, Sm<2+>, Nd<2+> and Tm<2+>; and x is equal to 0.5-5%. The silicate-based fluorescent material is prepared by adopting a solid phase reaction method. The chemical stability of the silicate-based fluorescent material Ae3SiO5:Eu<2+> is good, the peak value of the emission spectrum can be red-shifted to 600nm, the red spectral component produced when a blue light chip is matched with a yellow fluorescent powder for packaging a white-light LED (Light-Emitting Diode) can be effectively made up for, and the color rendering index can be improved.

Description

1. Technical field [0001] The invention relates to a fluorescent material and a synthesis method thereof, in particular to a silicate-based fluorescent material and a synthesis method thereof, which can effectively reduce color temperature and improve color rendering index when used in white light LEDs. The synthesis method utilizes a small amount of nano-SiO 2 with conventional SiO 2 Micropowder mixture as silicon source, in which a small amount of nano-SiO is added 2 It is conducive to the formation of crystal nuclei, and then promotes the rapid growth of crystal grains at high temperatures, and finally obtains high-efficiency luminescent materials. 2. Background technology [0002] Since 1994, Nichia first reported the use of Blu-ray chips with Y 3 Al 5 o 12 : Ce 3+ Since the (YAG) yellow phosphor produced white light, the performance, preparation technology and application range of white light LED products have made significant progress. In addition to being used ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/59C09K11/79
Inventor 陈雷罗安琪陈欣卉薛少婵邓晓蓉张耀刘法湧吕晟蒋阳
Owner HEFEI UNIV OF TECH
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