Thin-film solar cell and p-type semiconductor and preparation method of p-shaped semiconductor

Abstract

The invention discloses a thin-film solar cell and a p-type semiconductor and a preparation method of the p-shaped semiconductor. The thin-film solar cell is in a single-junction or a double-junction or a multi-junction structure having more than three junctions. The thin-film solar cell is formed by the p-shaped semiconductor which comprises a p<+> layer semiconductor thin film and a p<-> layer semiconductor thin film. As for a amorphous silicon cell, both the p+layer semiconductor thin film and the p<-> semiconductor thin film are amorphous silicon carbide a-Si C:H thin films. As for a microcrystalline silicon cell, both the p<+> layer semiconductor thin film and the p-layer semiconductor thin film are microcrystalline silicon mu-Si:H thin films. The p-shaped semiconductor not only enables more useful light to enter into an i-layer, the intrinsic absorption layer through the p-shaped semiconductor, but also is capable of contacting perfectly with a front electrode or a front junction cell so as to improve the export efficiency of an electron hole to the maximum extent. By improving from two aspects of the utilization efficiency of the solar spectrum and the carrier collection efficiency, the energy conversion efficiency of the photovoltaic cell prepared by the p-shaped semiconductor can be improved.

Description

technical field [0001] The invention relates to a thin-film solar cell, a p-type semiconductor made thereof and a preparation method of the p-type semiconductor. Background technique [0002] Thin-film solar cells represent the development trend of photovoltaic power generation technology due to their low energy consumption, low cost, large area integration and high conversion efficiency. Silicon-based thin-film solar cells currently occupy the largest market share of thin-film photovoltaic cells, and are generally prepared by PECVD (plasma-enhanced chemical vapor deposition) equipment using source gases containing silane. Single-junction silicon-based thin-film cells usually show a p-i-n structure, boron-doped silicon film (p layer) as the window region, undoped intrinsic silicon film (i layer) as the light absorption region, phosphorus-doped silicon film (n layer) ) is used to form a built-in electric field, and a transparent conductive oxide film is used as the front ele...

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Problems solved by technology

The first approach often leads to greater light-induced attenuation, while the second approach increases the additional absorption of incident light in the window layer

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