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Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof

A technology of graphene quantum dots and resistive variable memory, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. Precise control and other issues to achieve the effect of ensuring repeatability and stability, achieving large-scale production, and fast response

Inactive Publication Date: 2015-02-04
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the resistive variable memory has just entered the initial stage. Most of the organic materials used in the reported organic resistive variable memory have poor chemical stability and thermal stability. In addition, there are also problems with the stability of the resistance state transition of the device. The conditions of state transition will change due to the fluctuation of the device. Even for the same device, the turn-on and turn-off voltages required for resistive change and the values ​​​​of high resistance and low resistance generated will also have certain differences.
This large discrete type will make the device difficult to control precisely, which has become the main problem hindering the practical application of organic resistive memory.

Method used

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  • Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof
  • Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof

Examples

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Effect test

Embodiment 1

[0028] Dissolve polymethyl methacrylate (PMMA) in chlorobenzene solvent with graphene quantum dots extracted to make a solution with a solute concentration of 5~12mg / ml, preferably 10mg / ml, that is, take 20mg PMMA and dissolve it in 2ml In chlorobenzene with graphene quantum dots extracted, a solution was prepared by magnetic stirring for 6 hours.

[0029] The preparation steps of the organic resistive memory based on graphene quantum dot doping with the structure of ITO / Polymer:GQDs / Al are as follows:

[0030] (1) In the atmospheric environment, the ITO transparent conductive glass was ultrasonically cleaned for 20 minutes with acetone, alcohol, and deionized water in sequence, and dried in a drying oven.

[0031] (2) Spin-coat the above-mentioned polymer chlorobenzene solution doped with graphene quantum dots on the cleaned and dried ITO transparent conductive glass. The rotation speed is 1500~5000r / min, preferably 3900r / min, and the time is 30s. No heat treatment is requir...

Embodiment 2

[0035] Dissolve polystyrene (PS) in chlorobenzene solvent extracted with graphene quantum dots, and make a solution with a solute concentration of 5~12mg / ml, preferably 10mg / ml, that is, take 20mg PS and dissolve it in 2ml extracted with graphite In the chlorobenzene of alkene quantum dots, the solution was prepared by magnetic stirring for 6 hours. The manufacturing and testing process of the device is completed as described in Example 1, and the device exhibits stable resistive memory characteristics under the test of the probe station and semiconductor tester.

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Abstract

The invention discloses an organic resistive random access memory based on graphene quantum dot doping and a preparation method thereof. The organic resistive random access memory is a three-layer structure component comprising a bottom electrode, an organic functional layer and a top electrode forming on an insulating substrate. The organic functional layer adopts a polymer doped with graphene quantum dots to be dissolved on the bottom electrode to be spin-coated to form a film and adopts a thermal evaporation method to evaporate a cathode metal material to form a film to form the top electrode, and finally the organic resistive random access memory based on graphene quantum dot doping is made. The preparation process of the memory is simple, and the process is easily controlled and has high repeatability. The memory has the advantages of simple structure, stable performance and high response speed, and a flexible device can be made through a flexible substrate. The memory is used in the field of highly integrated high-capacity multi-value memories and has high application vale.

Description

technical field [0001] The invention relates to semiconductor storage and belongs to the field of organic memory, in particular to an organic resistive memory based on graphene quantum dot doping and a preparation method thereof. Background technique [0002] In today's digital age of information explosion, people's production and life are inseparable from high-density, high-speed memory. RRAM has a brand-new storage concept, which utilizes the controllable resistive effect in some inorganic oxides or organic substances / polymers, that is, under different voltage excitations, RRAM will present two completely different impedances The states (low resistance and high resistance, corresponding to "on" and "off") respectively represent the data "1" and "0", and after the voltage is removed, the state remains, thus realizing the storage of data. The advantages of resistive memory are simple structure, low power consumption, fast speed, high storage density, and simple manufacturin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/40
Inventor 李福山郭太良寇丽杰陈伟吴朝兴吴晓晓胡雪花
Owner FUZHOU UNIV