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Preparation method for silicon nitride matrix

A technology of silicon nitride substrate and silicon source is applied in the field of preparation of silicon nitride substrate, which can solve the problem of low performance of ceramic substrate, and achieve the effects of excellent mechanical properties, strong bonding and strong designability.

Active Publication Date: 2013-04-24
NORTHWESTERN POLYTECHNICAL UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to avoid the deficiencies of the prior art, the present invention proposes a method for preparing a silicon nitride substrate, which overcomes the prior art and prepares Si 3 N 4 The lack of high performance of the ceramic matrix facilitates the control of the composition, permeability, thickness and wave-transmitting properties of the prepared ceramic matrix

Method used

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  • Preparation method for silicon nitride matrix
  • Preparation method for silicon nitride matrix
  • Preparation method for silicon nitride matrix

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Experimental program
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Effect test

Embodiment 1

[0027] (1) Choose T300 2-dimensional plain weave carbon cloth, and cut the carbon cloth into small specimens with a plane size of 50mm×50mm as the base material;

[0028] (2) Hang the above-mentioned base material on the sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0029] (3) Using CVD / CVI method to prepare Si with uniform thickness on the substrate 3 N 4 , The precursor is MTS-NH 3 -H 2 -Ar, H 2 Carrier gas and NH 3 The flow ratio is 5:3, H 2 The dilution ratio of the total amount to MTS is 10.2:1, the reaction temperature is 900°C, the holding time is 7 hours, and the furnace pressure is 400 Pa.

Embodiment 2

[0031] (1) Use porous Si 3 N 4 The ceramic substrate is pre-processed according to the size of 22.86mm×10.16mm×2.2mm, and the surface of the molded substrate is ground and polished as the base material;

[0032] (2) Hang the above-mentioned base material on the sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0033] (3) Using CVD / CVI method to prepare Si with uniform thickness on the substrate 3 N 4 , The precursor is MTS-NH 3 -H 2 -Ar, H 2 Carrier gas and NH 3 The flow ratio is 5:3, H 2 The dilution ratio of the total amount to MTS is 8:1, the reaction temperature is 1200°C, the holding time is 7 hours, and the pressure in the furnace is 400Pa;

[0034] Using waveguide method to Si 3 N 4 -Si 3 N 4 Dielectric properties of multiphase ceramics are tested, and the test frequency is 8.2-12.4GHz.

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Abstract

The invention relates to a preparation method for a silicon nitride matrix, which is mainly used for the preparation of fiber toughening ceramic matrix composite materials and porous ceramic material matrixes. The preparation method comprises the following steps of depositing a silicon nitride matrix / coating on the inner side / surface of a substrate material by a chemical vapor infiltration / chemical vapor deposition technology; and adjusting the deposition velocity, the deposition thickness and the infiltration uniformity of a ceramic matrix by controlling process parameters. According to the preparation method, the prepared silicon nitride matrix has the characteristics of deep deposition and infiltration depth, good combination with the substrate, high performance and the like by means of the advantages of a chemical vapor infiltration / chemical vapor deposition process. Combined with the ware transmission property of the silicon nitride matrix, the preparation method has the advantage that a foundation of integration design of structures and functions of the continuous fiber toughening ceramic matrix composite material is laid.

Description

Technical field [0001] The invention relates to a method for preparing a silicon nitride substrate, to a method for preparing a silicon nitride wave-transmitting ceramic substrate, and in particular to a method for preparing a substrate material by chemical vapor deposition / chemical vapor infiltration technology (hereinafter referred to as CVD / CVI) Method for preparing silicon nitride ceramic substrate and coating on in-situ synthesis. Background technique [0002] Continuous fiber toughened ceramic matrix composite (CFCC) is composed of three structural units: fiber, matrix and interface phase. The synergy between them makes CFCC have high strength and toughness, and it is not sensitive to cracks and does not cause catastrophe Damaged. The base materials of CFCC include glass, oxide and non-oxide ceramics. Among them, non-oxide ceramic substrates, such as silicon carbide (SiC) and silicon nitride (Si 3 N 4 ), has the outstanding advantages of low density, high temperature resi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/584C04B35/622
Inventor 张立同刘永胜叶昉刘晓菲殷小玮成来飞
Owner NORTHWESTERN POLYTECHNICAL UNIV
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