Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for non-epitaxially growing semiconductor

A non-epitaxial growth and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems that cannot meet the needs of single crystal semiconductors, and achieve the effects of low cost, cheap and easy-to-obtain raw materials, and simple devices

Active Publication Date: 2015-03-11
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Said reports are still unable to meet the needs of direct in-situ growth of 1D micro / nanostructures or 2D thin film structures of single crystal semiconductors on different rigid / flexible substrates for many semiconductor optoelectronic device applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for non-epitaxially growing semiconductor
  • Method for non-epitaxially growing semiconductor
  • Method for non-epitaxially growing semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Preparation of silver flake sol

[0043] 0.169g AgNO 3 Dissolve in 20ml N-N dimethylformamide (DMF) to obtain mixed solution 1, dissolve 0.111g polyvinylpyrrolidone (PVP) in 20ml DMF to obtain mixed solution 2, after mixed solution 1 gradually changes from colorless to light yellow , dropwise added to the mixed solution 2, and magnetically stirred at room temperature for 8 minutes to obtain an orange-yellow solution, which was then sealed in a reaction kettle, and reacted in an oven at 140°C for 18 hours, and then centrifuged with ethanol at 2000rpm for 3 times. It takes 15 minutes to disperse with ethanol or water to obtain 0.03 mol / L silver flake ethanol sol or silver flake hydrosol with micro / nano structure.

[0044] (2) Preparation of silver sol with one-dimensional ribbon structure

[0045] 3.0g PVP was dissolved in 25ml DMF to obtain mixed solution 1, and then 0.172g AgNO 3 Dissolve in the mixed solution 1 to obtain the mixed solution 2. After the mixed solut...

Embodiment 2

[0053] (1) In a clean area of ​​1cm 2 Drop 4 drops (20ul / drop) of the silver flake ethanol sol prepared in Example 1 (1) on the ordinary glass substrate material, and let it dry naturally at room temperature. With the volatilization of ethanol, the silver flakes The silver film is self-assembled on the substrate material, and due to the van der Waals force and electrostatic attraction, it is firmly combined with the ordinary glass sheet; the ordinary glass sheet coated with the silver film is placed in a 50ml volume weighing bottle, and the silver film is on one side Upward, add 5ml of absolute ethanol and 300μl of 1-thiodecane in acetone with a substance concentration of 10%, let it stand for 8min, add 3ml of the sulfur precursor solution prepared in Example 1 (3), and mix Evenly, after sealing the lid, put it in an ordinary blast oven at 65 ° C for 5 hours to complete the reaction, take out the substrate material, soak and wash it with absolute ethanol for 3 times, and dry i...

Embodiment 3

[0057] (1) Treat an area of ​​2.25cm with 3-aminopropyltrimethoxysilane 2 clean PET conductive film substrate material, so that its wettability to water reaches complete infiltration, then on one side of its conductive layer, drop 10 drops (20ul / drop) of the silver flake hydrosol prepared in embodiment 1 (1) , dried in a vacuum drying oven at 50°C to form a uniform silver film, and due to the van der Waals force and electrostatic attraction, it is firmly combined with the PET conductive film; the PET conductive film coated with silver film is placed in a 50ml volume weighing In the measuring bottle, the side that is plated with the silver film faces up, and the absolute ethanol of 10ml and the concentration of 600 μl of substance are added to the acetone solution of 10% 1-thiodecane, let stand for 10min, add 6ml of Example 1 ( 3) For the prepared sulfur precursor solution, soak the PET conductive film coated with silver film in the above solution, then seal the weighing bottle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
areaaaaaaaaaaa
lengthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for non-epitaxially growing a semiconductor, which belongs to the field of preparation of nanometer materials. The method is a low-temperature liquid phase method, and comprises the following steps of: dropwise adding silver sol onto a substrate, and vaporizing a solvent in the silver sol to obtain a silver film; keeping a substrate silver film surface upward, adding ethanol and a 1-sulfo-decane acetone solution, standing, adding a chalcogen precursor solution, mixing, reacting at the temperature of 30-80 DEG C for 4-12 hours, washing with absolute ethanol, and naturally airing to obtain an amorphous film; and keeping an amorphous film surface upward, adding toluene, oleic acid and oleylamine, standing, adding a methanol solution of a cadmium salt and a phosphine ligand, reacting at the temperature of 50-80 DEG C for 2-6 hours, washing with absolute ethanol, and naturally airing to obtain a semiconductor which grows non-epitaxially. The method is low in cost, and is easy for large-scale production; and the method is not easily limited by lattice mismatch, a deposit critical thickness and a substrate, a single crystal semiconductor with a one-dimensional micro / nano structure or a two-dimensional film structure can be grown in situ on different substrates under large lattice mismatch, and the method has a wide application field.

Description

technical field [0001] The invention relates to a method for non-epitaxially growing semiconductors. The method is non-epitaxially growing on different substrates by using a low-temperature liquid phase method in the morphology-controlled synthesis of inorganic semiconductor nano-optoelectronic materials under a large lattice mismatch degree. The semiconductor method, the prepared semiconductor has single crystal, presents a one-dimensional micro / nano structure or a two-dimensional thin film structure, and belongs to the field of nanomaterial preparation. Background technique [0002] The single crystal of semiconductor is the basic premise to control the motion state and law of electrons and holes, and further p-type, n-type doping and recombination regulation. The growth of single crystal semiconductors with traditional micro / nano structures or thin film structures follows the epitaxial growth theory. The preparation methods mainly include molecular beam epitaxy, metal org...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 张加涛钱红梅赵倩戴宝松
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com