Gallium nitride extension preparation method for semiconductor device

Abstract

The invention relates to the field of semiconductor materials and devices, and in particular to a method of heterojunction nanometer extension preparing broad-band gap semiconductor gallium nitride extension based on a silicon substrate. The gallium nitride extension preparation method for the semiconductor device solves the problem that dislocation density gallium nitride extension on silicon substrate is high in the existing technique. The main steps of the gallium nitride extension preparation method for the semiconductor device includes that a through-hole nanoscale mask prepared is transferred to a substrate which grows silica through cladding material, and a well-organized nanoscale microstructure is further formed through etching. The growth of silicon epitaxy nanowire is caught out in nanometer hole of the silica, a head of silicon nanowire is exposed on the surface of the silica after etching, and carborundum is formed through carbonization and further grows along the lateral detection to form a gallium nitride epitaxial layer.

Description

technical field [0001] The invention relates to the field of semiconductor materials and devices, in particular to a method for preparing wide-bandgap semiconductor gallium nitride epitaxy by heterojunction nano-lateral epitaxy on a silicon substrate. Background technique [0002] A series of emerging industries or products currently emerging - "new energy", "high-speed rail", "electric vehicles", "smart grid", "LED", "4G" and so on all rely on semiconductor materials and devices without exception and module applications. However, the performance of traditional silicon devices and modules such as silicon and gallium arsenide is close to the theoretical limit determined by the material characteristics, and can no longer meet the increasing high frequency, high power, and high energy efficiency of current power electronics / radio frequency electronics / optoelectronics. need. Wide bandgap semiconductor gallium nitride epitaxy and device preparation are the general trend of the ...

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a method for preparing gallium nitride epitaxy based on heterojunction nano-lateral epitaxy on a silicon substrate, so as to solve the problem of high dislocation density of gallium nitride epitaxy on a silicon substrate in the prior art. Effectively suppress the formation of misfit dislocations and reduce the dislocation density

Images