Carbon nano tube field effect tube of double-material underlap heterogeneous grid structure
A technology of carbon nanotubes and field effect tubes, which is applied in the field of structural optimization of device performance, can solve problems such as device performance degradation, achieve high current switching ratio, low leakage current, and suppress the effect of leakage-induced barrier reduction
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[0018] The idea of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0019] figure 1 It is a schematic diagram of a vertical cross-sectional structure of the present invention.
[0020] like figure 1As shown, the conductive channel 1, the source region 2 and the drain region 3 are all made of carbon nanotube materials, and a fundamental semiconductor carbon nanotube is selected, and the middle part is used as the carbon nanotube field of the dual-material understacked heterogeneous gate structure. The conductive channel 1 of the effect tube is used as the source region of the carbon nanotube field effect tube with the dual-material understacked heterogeneous gate structure after the two ends of the intrinsic semiconductor carbon nanotubes are heavily doped with N-type molecules or metal ions 2. The drain region 3; outside the conductive channel 1, the source region 2 and the drain region 3, a layer of gate ox...
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