Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings
A carbon nanotube and field effect tube technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing device performance, and achieve the effects of large drive current, suppression of short channel effects, and good high frequency characteristics
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[0021] The proposed CNTFET structure of the present invention is as figure 1 As shown, it is a ring-gate structure, and the outermost gate is composed of three materials with different work functions. A carbon nanotube with uniform thickness is used as a conductive channel, surrounded by a ring-shaped gate insulating layer, and the device has a symmetrical structure. The source and drain regions of the device are heavily doped with N-type through gas phase or liquid phase chemical ion implantation, and the carbon nanotube channel is not doped. The gate length is smaller than the channel region length, forming an under-gate structure. The simulation of the device first uses the non-equilibrium Green's function to calculate the charge density, and then solves the three-dimensional Poisson equation of the device self-consistently, and combines the Neumann (Neumann) boundary conditions to obtain the channel current, and then calculates other electrical parameters.
[0022] Aimi...
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