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Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings

A carbon nanotube and field effect tube technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing device performance, and achieve the effects of large drive current, suppression of short channel effects, and good high frequency characteristics

Inactive Publication Date: 2013-05-08
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such CNTFETs will exhibit a polarization effect that degrades the performance of the device

Method used

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  • Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings
  • Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings
  • Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings

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Embodiment Construction

[0021] The proposed CNTFET structure of the present invention is as figure 1 As shown, it is a ring-gate structure, and the outermost gate is composed of three materials with different work functions. A carbon nanotube with uniform thickness is used as a conductive channel, surrounded by a ring-shaped gate insulating layer, and the device has a symmetrical structure. The source and drain regions of the device are heavily doped with N-type through gas phase or liquid phase chemical ion implantation, and the carbon nanotube channel is not doped. The gate length is smaller than the channel region length, forming an under-gate structure. The simulation of the device first uses the non-equilibrium Green's function to calculate the charge density, and then solves the three-dimensional Poisson equation of the device self-consistently, and combines the Neumann (Neumann) boundary conditions to obtain the channel current, and then calculates other electrical parameters.

[0022] Aimi...

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Abstract

The invention discloses a three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings. The field-effect tube is of a cylindrical shape on the whole and comprises a carbon nano tube (1), an insulating layer (2) which is surrounded outside the carbon nano tube (1) and ring gratings (3) which are placed outside the insulating layer (2), wherein the carbon nano tube (1), the insulating layer (2) and the ring gratings (3) are sequentially arranged from the center to the outside. The insulating layer (2) is of a ring shape, and the length of the insulating layer (2) is the same as that of the carbon nano tube (1). A source electrode (4) and a drain electrode (5) are respectively arranged at both ends of the carbon nano tube (1). Parts of the carbon nano tube which are connected with the source electrode (4) and the drain electrode (5) are respectively provided with a source region (41) and a drain region (51), the length of the source region (41) is the same as that of the drain region (51), and N type heavy doping is adopted both in the source region (41) and the drain region (51). Thus, an owe grating structure is added. When a three-material work function gradually decreases from the source electrode to the drain electrode, or a middle work function is maximum, and the position close to the side of the drain electrode is minimum, the structure can effectively enhance performance, high frequency response is improved, and meanwhile, switching current ratio is improved.

Description

[0001] technical field [0002] The invention relates to the field of carbon nanotube field effect tubes, in particular to the heterogeneous gate structure and subgate structure of carbon nanotube field effect tubes. [0003] Background technique [0004] Carbon nanotubes can be thought of as rolled up graphene, with a hollow cylindrical structure. Due to this special structure, it has special properties in optical, electrical and mechanical properties, which also makes the application of carbon nanotubes in nanoelectronic and optoelectronic materials have broad prospects. Carbon nanotubes have different energy bands under different geometric structures, such as metal energy bands or semiconductor energy bands. Metallic carbon nanotubes can be used as intermediate junctions, which have the advantages of high thermal conductivity and low loss. Semiconducting carbon nanotubes can be embedded in devices such as field effect transistors (FETs). Compared with silicon material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/49
Inventor 王伟肖广然夏春萍
Owner NANJING UNIV OF POSTS & TELECOMM