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A method to improve the optical properties of Mn-doped quantum dots

A technology of optical properties and quantum dots, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of defect luminescence, limited doping amount, low luminous efficiency of quantum dots, etc., achieve small size, improve optical properties, and optimize selection Ligand effect

Active Publication Date: 2016-03-09
NINGBO UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

On the one hand, this method has a limited doping amount for II-VI quantum dots containing Cd, and the dopant ions are easily adsorbed on the surface of the quantum dots, and even some nanocrystals have no dopant ions, so the luminous efficiency of the prepared quantum dots low (currently reported up to 29%), and a large proportion of defect states in the spectrum emit light

Method used

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  • A method to improve the optical properties of Mn-doped quantum dots
  • A method to improve the optical properties of Mn-doped quantum dots
  • A method to improve the optical properties of Mn-doped quantum dots

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Weigh 0.03g (0.05mmol) manganese stearate (MnSt 2 ) and measure 12mL of octadecene (ODE) into a 100mL three-necked bottle. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 110°C for 20 minutes to remove the gas in the bottle, and then raise the temperature to 260°C. The sulfur (S) precursor solution (containing 1.5 mmol S powder, 3 mL LODE, and 0.2 mL dodecanethiol (DDT)) was quickly injected into the three-necked flask at 260 °C to generate MnS crystal nuclei. After injecting S, the temperature is rapidly lowered to 150°C to stop the MnS crystal nucleus from continuing to grow, and then the temperature is rapidly raised to 230°C. At this temperature, 7 mL of cadmium precursor solution (containing 1 mmol cadmium stearate (CdSt 2 ) and 7mLODE) were added to the reaction solution to obtain MnS / CdS quantum dots without a ZnS transition layer. Finally, the solution ...

Embodiment 2

[0043] Weigh 0.03g (0.05mmol) MnSt 2 And measure 12mL LODE into a 100mL three-necked bottle. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 110°C for 20 minutes to remove the gas in the bottle, and then raise the temperature to 260°C. The S precursor solution (containing 1.5 mmol S, 3 mL LODE, and 0.2 mL DDT) was quickly injected into the three-neck flask at 260 °C to generate MnS crystal nuclei. After injecting S, the temperature is rapidly lowered to 150°C to stop the MnS crystal nuclei from continuing to grow, and then the temperature is raised to 260°C. 3 mL of zinc precursor solution (containing 0.05 mmol of zinc stearate (ZnSt 2 ), 0.6mL oleylamine (OLA) and 1mLODE) were slowly injected into the three-neck flask, and kept at 260°C for 10min to obtain MnS / ZnS quantum dots. Then 6 mL of cadmium precursor solution (containing 0.95 mmol CdSt 2 and 6mLODE) were add...

Embodiment 3

[0045] Weigh 0.03g (0.05mmol) MnSt 2 And measure 12mL LODE into a 100mL three-necked bottle. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 110°C for 20 minutes to remove the gas in the bottle, and then raise the temperature to 260°C. The S precursor solution (containing 1.5 mmol S, 3 mL LODE, and 0.2 mL DDT) was quickly injected into the three-neck flask at 260 °C to generate MnS crystal nuclei. After injecting S, the temperature is rapidly lowered to 150°C to stop the MnS crystal nucleus from continuing to grow, and then the temperature is rapidly raised to 260°C. 3 mL of zinc precursor solution (containing 0.1 mmol ZnSt 2 , 0.6mLOLA and 3mLODE) were slowly injected into the three-neck flask, and kept at 260°C for 10min to obtain MnS / ZnS quantum dots. Then 7 mL of cadmium precursor solution (containing 1 mmol CdSt 2 and 7mLODE) in four times (respectively 1mL, 2mL...

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Abstract

The invention provides a method for improving the optical property of a high Mn-doped quantum dot. A method for obtaining a Mn-doped CdE quantum dot comprises the following steps of: (1) small-crystal nucleus growth of MnE (E belongs to chalcogens); (2) growth of a ZnE transition layer; and (3) shell growth of CdE, so as to obtain the Mn-doped quantum dot. Compared with the prior art, for the method, the transition layer (ZnE) with certain thickness is introduced aiming at the characteristic of the high mismatch of ion radius of Mn and Cd in the quantum dot, so that the lattice imperfection caused by the mismatch of ion dimension can be effectively reduced, the effective and controllable doping of Mn ions in the quantum dot can be enhanced, and the luminous efficiency can be greatly improved. Experiments prove that the photoluminescence efficiency can reach -70% and further exceeds the highest luminous efficiency of 29% reported in the existing document. Furthermore, light is only emitted by means of the transition emission of the Mn ions 4T1-6A1, so that the problem that the conventional Mn-doped CdE quantum dot always accompanies with the band edge luminescence or defect luminescence can be solved. The method is simple in equipment and controllable in technology, thereby probably being a universal method for improving the optical property of the highly doped quantum dot.

Description

technical field [0001] The invention is suitable for preparing doped semiconductor nano-materials (quantum dots) used in optoelectronic devices such as light-emitting diodes and solar cells, and is particularly suitable for preparing highly efficient luminescent Mn ion-doped Cd-containing quantum dots, and belongs to the technical field of material preparation. technical background [0002] When the size of the material is reduced to the nanometer level, due to its nano-effect, the material will produce many novel and unique functional properties superior to traditional materials, and has potential in the fields of microelectronics, bioengineering, fine ceramics, chemical industry, and medicine. wide application. [0003] In recent years, nano-luminescent materials with transition metals as active ions have attracted the attention of many scholars at home and abroad due to their excellent optical properties. It has been found that the optical, electrical, magnetic and other...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/56C09K11/88
Inventor 郑金桔曹盛王霖高凤梅尉国栋杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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