Parasitically transversal type PNP device and manufacture method

Abstract

The invention discloses a parasitically transversal type PNP device. A base region is composed of N-type injection layers which are formed in two adjacent active regions. An emitter region is composed of P-type doped polycrystalline silicon artifact buried layers which are formed on a shallow groove field oxide bottom between the two active regions of the base region. A collector region is composed of the P-type doped polycrystalline silicon artifact buried layers which are formed on shallow groove field oxide bottom on two sides of the two active regions of the base region. The final formed device is in a C-B-E-B-C structure. The structure can convert a current path of the base region of the device into a straight line type, improve current capacity of the device, and significantly improve the current gain and frequency features of the device. Meanwhile, areas of the device can be reduced and current density is improved. The polycrystalline silicon artifact buried layers can reduce the connecting resistance of the emitter region and the collector region, enable the resistance to be uniform, and improve cut-off frequency of the device greatly. The invention further discloses a manufacture method of the parasitically transversal type PNP device.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a parasitic lateral PNP device; the invention also relates to a manufacturing method of the parasitic lateral PNP device. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Silicon germanium (SiGe) heterojunction bipolar transist...

AI Technical Summary

Problems solved by technology

The existing parasitic lateral PNP device technology is mature and reliable, but the main disadvantages are: 1. The current Ic path of the base area is an L-shaped structure, so the current amplification capability is weak and the frequency characteristic is poor

2. The base area is led out from the side, and the device area is large

3. The collector area adopts epitaxial growth, and the epitaxial cost is high

4. The deep trench isolation process is complicated and the cost is high

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