38results about How to "Diffusion evenly distributed" patented technology

The invention relates to a gasoline engine exhaust particle filter catalyst and a preparation method thereof. The height of the direction is 100% of the height of the carrier. The catalytic coating contains cerium-zirconium rare earth composite oxide, γ-alumina and noble metal active components. The noble metal active components include Pd and Rh, and the loading of Pd is 0.1~1.5 g / L; the loading of Rh is 0.05~0.5 g / L. The invention realizes the uniform diffusion and distribution of the catalytic coating on the inner wall structure of the pore channel through the improvement of the coating process of the catalytic coating, thereby significantly reducing the exhaust back pressure of the particulate matter filter catalyst, and meanwhile the uniformly distributed catalytic coating is very good It plays the role of intercepting particulate matter and transforming gaseous pollutants, so that the filter catalyst prepared by the invention does not negatively affect the particle collection rate and catalytic performance while reducing the exhaust back pressure.

The invention discloses a germanium silicon heterojunction bipolar transistor. A groove is formed in the bottom of shallow groove field oxygen in the circumstance of an active region, polycrystalline silicon is filled in the groove, a polycrystalline silicon burying layer is formed by the polycrystalline silicon filled in the groove, N type impurities are mixed with the polycrystalline silicon burying layer, the N type impurities further spread to a silicon substrate in the circumstance of the polycrystalline silicon burying layer to form a first N type impurities region, a collector connecting layer is formed by the polycrystalline silicon burying layer and the first N type impurities region, the collector connecting layer is contacted with a collector region at the bottom of the shallow groove field oxygen, and a deep hole contact area is formed in the shallow groove field oxygen on the top of the pseudo buried layer and leads a collector out. The invention further discloses a manufacturing method of the germanium silicon heterojunction bipolar transistor. According to the germanium silicon heterojunction bipolar transistor and the manufacturing method thereof, the thickness of the collector connecting layer can be increased to enable the distribution of impurities to be even, the resistance and the contact resistance of the collector connecting layer can be reduced and the value of the resistance and the contact resistance are enabled to be even, and thus the cut-off frequency of the germanium silicon HBT (SiGe HBT) can be improved.

The present invention relates to the technology of separating particle, and an axial-flow filtering centrifuge with light internal rotor. The centrifuge includes laminated pin wheel rotor combination to start vortex and with extending area to cover partial intake mouth height; transmission mechanism, atomizing liquid jet to spray water or other gas absorbent, cylindrical filter outside the flow field for filtering, distributing air and distributing material, frustum filter for filtering, distributing air and weaken turbulence. The filtered material is eliminated via centrifugation, vortex and the vibration of the transmission mechanism. With high particle separating efficiency, the centrifuge is used in dusting, defogging, eliminating mist, desulfurizing and gas absorbing reaction of mixed material.

The invention discloses a range hood, which comprises a fan frame and a fan system arranged in the fan frame. The fan system includes a first volute and a second volute arranged side by side. A first air inlet is formed, and a second air inlet is formed on the second volute. The first air inlet faces to the left, and the second air inlet faces to the right. It is characterized in that: the first air inlet is formed by The front to the rear is gradually inclined to the left, and the second air inlet is gradually inclined to the right from the front to the rear, so that there is an included angle between the first air inlet and the second air inlet. Compared with the prior art, the present invention has the advantages of pulling the oil fume on the front side to the rear side to realize uniform distribution of the flow field on the front and rear sides, so that the oil fume accumulated on the front side has a slower flow rate than that placed in parallel (thus It can reduce noise and abnormal sound), and the narrow state of the rear makes the capture ability of the rear side of each air inlet stronger, improves the longitudinal balance, and the force is more uniform, reducing vibration.

The invention discloses a vertical parasitic type PNP triode. A groove is formed in the bottom portion of shallow shot field oxygen on the circumferential side of an active region, and is filled with polycrystalline silicon, the polycrystalline silicon filling in the groove forms a polycrystalline silicon buried layer, P-type impurities are mixed in the polycrystalline silicon buried layer, and the P-type impurities further spread to silicon substrate on the circumferential side of the polycrystalline silicon buried layer to form a first P-type doped region. The polycrystalline silicon buried layer and the doped region form a collector connecting layer, and the collector connecting layer contacts with a collecting region on the bottom portion of the shallow slot field oxygen. Deep holes are formed in the shallow slot field oxygen on the upper portion of the polycrystalline silicon buried layer and contact with and lead out collectors. The invention further discloses a manufacture method of the vertical parasitic type PNP triode. The vertical parasitic type PNP triode and the manufacture method of the vertical parasitic type PNP triode can improve the thickness of the collector connecting layer, and enable the impurities to be distributed evenly, can reduce the resistance and the contact resistance of the collector collecting layer and enable resistance values to be even, and therefore can improve the cut-of frequency of a device.

The invention belongs to the field of blanking of color sorters, and particularly relates to a blanking vibrating screen of a color sorter. The blanking vibrating screen of the color sorter comprises a vibrating screen body, wherein a rectangular material channel is arranged in the vibrating screen body, a separation line along a diagonal of the material channel is arranged in the material channel, a material sorting channel is arranged on one side of the separation line, a blanking channel on arranged on the other side, the blanking channel comprises at least two sub blanking channels, and a baffle is arranged between every two sub blanking channels. According to the vibrating screen, the diagonally arranged separation line of the sorting channel and the blanking channel is adopted, so that the chance that materials pass through each sub blanking channel in the blanking channel is equal, the blanking vibrating screen is even in sorting and blanking, the color sorting working efficiency of the color sorter can be effectively improved, and the color sorting capacity can be improved.

The invention provides a light-emitting diode comprising a base material, an action membrane and an electrode unit; particularly, the action membrane comprises a bottom connected with the base material and a platform part extending upwards from the bottom; the bottom comprises an opening region, a middle region, a first region and a second region, wherein, the middle region extends towards the first direction from the opening region; the first region and the second region are positioned at the two sides opposite to the opening region and the middle region; the electrode unit comprises a firstelectrode and a second electrode, wherein, the first electrode is arranged on the opening region; the second electrode is arranged on the top surface of the platform part; the width specific value ofthe first region and the second region which are vertical to the first direction is between 0.6 to 0.95; and the light-emitting efficiency of the light-emitting diode can be effectively promoted by utilizing the specific setting of the width specific value of the first region and the second region which are vertical to the first direction.

The invention discloses a parasitic transversal NPN component. A base region is formed by P-shaped injection layers formed in two adjacent active areas, an emitter region is formed by N-shaped mixed polycrystalline silicon buried layers formed on the bottom of shallow groove oxygen between the two active regions of the base region, and a current collection region is formed by the N-shaped mixed polycrystalline silicon buried layers formed on the bottom of the shallow groove oxygen on two sides of the two active regions of the base region. The structure of the component is C-B-E-B-C. The structure can enable a current path in the base region of the component to change into a linear shape, improve current capacity of the component, and enable current gain and frequency characteristic of the component to be improved greatly, reduce area of the component and provide current density. The polycrystalline silicon buried layers can reduce connecting resistance of an emitter and a collector, enable the resistance to be uniform, and greatly improve cut-off frequency of the component. The invention further discloses a manufacturing method of the parasitic transversal NPN component.