37results about How to "Diffusion evenly distributed" patented technology

The present invention relates to the technology of centrifugal separation of mixed liquid. The centrifuge incldues transmission mechanism, pin wheel rotor with extending area covering at least partial centrifugal cavity space, slurry intake, casing and filtering cylinder assembly, aerator, slurry outlet filter and light phase skimming out device. The centrifugal cavity has several modes and several slurry and material discharge combinations. The material in slurry discharge filter is eliminated by centrifugal vortex and gravity. The present invention is used in solid-solid, liquid-liquid and solid-liquid-liquid separation, mass-transferring reaction and sewage treatment.

The invention provides a 5xxx aluminum alloy board for an automobile body and a manufacturing method thereof. The board comprises the following components: 4.4 to 5.0wt% of Mg, not greater than 0.1wt% of Si, not greater than 0.25wt% of Fe, not greater than 0.25wt% of Mn, not greater than 0.05wt% of Cr, not greater than 0.3wt% of Cu, and the balance Al and inevitable impurity elements. The manufacturing method comprises the following steps: melting and casting aluminum alloy into an ingot; performing double-stage homogenizing treatment, namely, heating at a speed of being not less than 50 DEG C per hour until the temperature is 400 to 440 DEG C, maintaining the temperature for more than 2 hours, then heating at the speed of being not greater than 30 DEG C per hour until the temperature is 500 to 540 DEG C, and maintaining the temperature for more than 5 hours; performing hot rolling, cold rolling, intermediate annealing and final cold rolling; performing final annealing at the temperature of 450 to 530 DEG C in a continuous annealing manner. According to the 5xxx aluminum alloy board for the automobile body and the manufacturing method thereof, the components of the alloy and the preparation process of the aluminum alloy board are controlled, so that the yield strength and elongation percentage of the aluminum board can be improved, and as a result, the grain size can be increased within a certain range, and the surface of the formed board is free of luders bands.

The invention relates to a gasoline engine tailing gas particle filtering device catalyst and a preparation method thereof. The catalyst comprises a carrier, the inner wall of a hole of the carrier iscoated with a catalytic coating layer, the coating mount of the catalytic coating layer is 50-120 g/L, the height of the catalytic coating layer in the axial direction is 100% of the height f the carrier, the catalytic coating layer comprises cerium-zirconium rare-earth oxides, gamma-aluminum oxides and precious metal active components, the precious metal active components comprise Pd and Rh, wherein the loading amount of Pd is 0.1-1.5 g/L, and the loading amount of Rh is 0.05-0.5 g/h. the catalyst has the advantages that through the improvement of a catalytic coating layer coating technology, the uniform dispersing distribution on the inner wall structure of the hole of the catalytic coating layer is achieved to significantly reduce the gas discharging back pressure of a particle filtering device catalyst, the effects of intercepting particles and converting gaseous pollutants are well achieved by the uniformly distributed catalytic coating layer, and therefore gas discharging back pressure is reduced by the prepared filtering device catalyst while the particle capturing rate and catalytic performance are not impacted by negative influences.

The invention discloses an LED (light emitting diode) wafer with evenly distributed current, comprising an N-type semiconductor layer, a luminescent layer, a P-type semiconductor layer, negative electrodes and positive electrodes, wherein the luminescent layer is formed on the N-type semiconductor layer; the P-type semiconductor layer is formed on the luminescent layer; the surface of the P-type semiconductor layer is provided with grooves communicated with the N-type semiconductor layer; the negative electrodes are formed on the grooves; and the positive electrodes are formed on the P-type semiconductor layer. The LED wafer is characterized in that the grooves are one pair of symmetrical E-shaped grooves; the symmetrical E-shaped grooves are distributed on the N-type semiconductor layer; the negative electrodes are formed on the grooves to correspondingly form symmetrical E-shaped negative electrodes; and the positive electrodes surround the symmetrical E-shaped negative electrodes. The LED wafer has the advantages of even heat dissipation, high light emission efficiency, long service life and the like.

The invention discloses a preparation method of a large-size 6061 aluminum alloy plate for semiconductor equipment. The preparation method comprises the following steps of smelting and casting a proportioned aluminum alloy to obtain an aluminum alloy cast ingot; enabling the obtained aluminum alloy cast ingot to be subjected to homogenizing heat treatment, machining, preheating and hot rolling, and obtaining the large-specification aluminum alloy plate; and enabling the large-specification aluminum alloy plate obtained after the hot rolling to be pre-stretched, enabling the pre-stretched plateto be subjected to solution hardening, then conducting stretching and leveling, and conducting artificial aging. According to the preparation method, microstructure distortion energy segregation generated in the rolling process of the ultra-thick and ultra-wide 6061 plate can be eliminated or even, quenching internal stress generated by solid solution quenching is lower and more even, meanwhile,stress relief stretching after the quenching is combined, the residual internal stress is almost completely eliminated, the subsequent machining precision of the plate is remarkably improved, and therequirement of semiconductor equipment on high form and location stability of the aluminum plate is met.

The invention discloses a seeding device for traditional Chinese medicinal material planting, and relates to the technical field of traditional Chinese medicinal material planting. The seeding devicefor the traditional Chinese medicinal material comprises a movable frame; travelling wheels which are driven to rotate through a motor are rotationally arranged at the bottom of the movable frame; a storage box which is used for storing seeds is mounted on the movable frame; a limiting spring of which the two ends are respectively fixed to a sliding baffle plate and the storage box is transverselyarranged in an inserting chamber; a driving motor is in transmission connection with an equally distributing mechanism which is positioned in equally distributing cover and is used for equally dividing seeds; the seeding device for traditional Chinese medicinal material planting is high in automation degree; the sliding plate is driven to perform transverse reciprocating motion through a transmission mechanism so as to realize intermittent falling seeding of the traditional Chinese medicine seeds in the storage box; the device seeds intermittently when moving, so that the seeding distance ofthe seeds is ensured; meanwhile, the equally distributing mechanism is arranged, which can uniformly disperse and distribute the seeds which fall from the equally distributing cover, so that the influence on the germination of the seeds caused by excessive accumulation of the traditional Chinese medicine seeds is avoided, and the seeding effect of the seeds in a traditional Chinese medicinal material planting process is greatly improved.

The invention provides an epitaxial wafer of a light emitting diode and a preparation method of epitaxial wafer, and belongs to the technical field of photoelectron manufacturing. The epitaxial wafercomprises a substrate, an AlN buffer layer, a three-dimensional nucleating layer, a u-type GaN layer, an n-type GaN layer, a multi-quantum well layer, a low-temperature p-type layer, an electron blocking layer and a high-temperature p-type layer, the multi-quantum well layer comprises a plurality of InxGa1-xN quantum well layers, a plurality of GaN quantum barrier layers and a composite structurelocated between the InxGa1-xN quantum well layers, and the composite structure comprises a n-InyGa1-yN layer and a SiN layer. Si atoms in the n-In-yGa1-yN layer can fill defect vacancies in the InGaNmaterial, the InGaN material with a low In component is beneficial to weakening a polarization electric field and improving energy band inclination, and the SiN layer is beneficial to uniform diffusion of carriers in the multi-quantum well layer, improving the carrier localization effect and improving the luminous efficiency of the LED.

The invention discloses a germanium silicon heterojunction bipolar transistor. A groove is formed in the bottom of shallow groove field oxygen in the circumstance of an active region, polycrystalline silicon is filled in the groove, a polycrystalline silicon burying layer is formed by the polycrystalline silicon filled in the groove, N type impurities are mixed with the polycrystalline silicon burying layer, the N type impurities further spread to a silicon substrate in the circumstance of the polycrystalline silicon burying layer to form a first N type impurities region, a collector connecting layer is formed by the polycrystalline silicon burying layer and the first N type impurities region, the collector connecting layer is contacted with a collector region at the bottom of the shallow groove field oxygen, and a deep hole contact area is formed in the shallow groove field oxygen on the top of the pseudo buried layer and leads a collector out. The invention further discloses a manufacturing method of the germanium silicon heterojunction bipolar transistor. According to the germanium silicon heterojunction bipolar transistor and the manufacturing method thereof, the thickness of the collector connecting layer can be increased to enable the distribution of impurities to be even, the resistance and the contact resistance of the collector connecting layer can be reduced and the value of the resistance and the contact resistance are enabled to be even, and thus the cut-off frequency of the germanium silicon HBT (SiGe HBT) can be improved.

The invention relates to an airflow distribution device of an electric bag dust collector, which includes a housing, a first distribution plate, a second distribution plate, and a third distribution plate. The first distribution plate, the second distribution plate, and the third distribution plate are from From the outside to the inside, they are arranged in the casing of the reducing pipe in sequence. The upper panels of the first distribution plate and the second distribution plate are at 90° to the upper panel of the casing, and the upper panels of the first distribution plate and the second distribution plate are The lower panel is 90° to the lower panel of the housing, the shape of the third distribution plate is spherical, and the opening ratios of the airflow holes on the first, second and third distribution plates are 40%, 60%, and 80% respectively , the shapes of the airflow holes on the first, second and third distribution plates are five-pointed star, four-pointed star and three-pointed star respectively. This kind of device adjusts the flow velocity of the inlet airflow in the variable diameter pipe, so that the airflow is evenly diffused and distributed, the purification efficiency is improved, and the failure rate of the equipment is reduced.

The invention discloses a vertical parasitic type PNP triode. A groove is formed in the bottom portion of shallow shot field oxygen on the circumferential side of an active region, and is filled with polycrystalline silicon, the polycrystalline silicon filling in the groove forms a polycrystalline silicon buried layer, P-type impurities are mixed in the polycrystalline silicon buried layer, and the P-type impurities further spread to silicon substrate on the circumferential side of the polycrystalline silicon buried layer to form a first P-type doped region. The polycrystalline silicon buried layer and the doped region form a collector connecting layer, and the collector connecting layer contacts with a collecting region on the bottom portion of the shallow slot field oxygen. Deep holes are formed in the shallow slot field oxygen on the upper portion of the polycrystalline silicon buried layer and contact with and lead out collectors. The invention further discloses a manufacture method of the vertical parasitic type PNP triode. The vertical parasitic type PNP triode and the manufacture method of the vertical parasitic type PNP triode can improve the thickness of the collector connecting layer, and enable the impurities to be distributed evenly, can reduce the resistance and the contact resistance of the collector collecting layer and enable resistance values to be even, and therefore can improve the cut-of frequency of a device.

The invention provides an industrial firing rotary kiln with a kiln-in-kiln structure. The industrial firing rotary kiln comprises a rotary kiln barrel body, the rotary kiln barrel body comprises a heat insulation layer and a toothed hook special-shaped flame retardant layer, an inner kiln circular pipe with the inner wall provided with inner kiln toothed hooks is arranged inside the rotary kiln barrel body, a plurality of supporting column walls are arranged in an outer kiln in a balanced mode, a heating space is formed between every two adjacent supporting column walls, the two ends of the rotary kiln barrel body are provided with a kiln tail cover and a kiln head cover correspondingly, an outer kiln centralized stock bin is formed between the kiln tail cover and the supporting column walls, the rotary kiln barrel body is provided with a transition cover, a cooling zone is formed between the transition cover and the kiln head cover, the bottom of the cooling zone is provided with a material feeding cooling zone channel port, a combustor placing chamber is formed between the transition cover and the supporting column walls, an inner kiln receiving pipe and a combustor are arrangedin the center inside the cooling zone, and the lower portion of the transition cover and the position leading to the cooling zone are each provided with a discharge outlet. The industrial firing rotary kiln has the advantages that the inner and outer filling rate is high, drying and combustion are sufficient, fuel energy consumption is low, combustion time is short, and energy conservation and emission reduction are achieved.

The invention discloses a range hood. The range hood comprises a fan frame and a fan system arranged in the fan frame, wherein the fan system comprises a first volute and a second volute which are arranged in parallel; a first air inlet is formed in the first volute; a second air inlet is formed in the second volute; the first air inlet faces the left side; and the second air inlet faces the rightside. The range hood is characterized in that the first air inlet is gradually inclined leftwards from front to back, and the second air inlet is gradually inclined rightwards from front to back, sothat an included angle is formed between the first air inlet and the second air inlet. Compared with the prior art, the range hood has the advantages that oil smoke on the front side is pulled to therear side, so that flow fields on the front side and the rear side are uniformly distributed, and the flow speed of the oil smoke accumulated on the front side is lower than that of the oil smoke accumulated on the front side which is placed in parallel (so that noise and abnormal sound can be reduced); and the rear side is narrow, so that the capturing capacity of the rear side of each air inletis higher, the longitudinal balance is improved, the stress is more uniform, and vibration is reduced.

The invention discloses an anti-wrinkle textile drying machine. The anti-wrinkle textile drying machine structurally comprises a dehumidification device, a support, textile cloth, a dryer, a fan, an air outlet, a machine body and a guide roller. When the anti-wrinkle textile drying machine is used after improvement, hot air is evenly diffused on the textile cloth through an air cushion elastic film, water impacting on the air cushion elastic film can slide onto a separating and filtering layer to be filtered and removed, the filtered water drops onto fiber cotton from water guiding holes, absorbing paper makes contact with the fiber cotton to absorb the water, then a resin sheet is used for absorbing the water on the absorbing paper, after the resin sheet absorbs the water and expands, the water in the resin sheet can be separated from the resin sheet and drops onto a clamping block, the water flows to a water guide plate through water outlet holes using a transparent film, then the water guide plate guides the water to a sliding plate, the sliding plate guides the water to the interior of a drying cavity through a nano arc plate for adsorption treatment, the dried textile cloth is prevented from being affected with damp for the second time, and the drying effect of the textile cloth is improved.

A magnesium alloy material smelting device comprises a smelting furnace and a disc type filling device, the disc type filling device comprises a stirring shaft, a filling basket and a disc type stirring head, the stirring shaft is connected with the filling basket, the bottom of the filling basket is connected with the disc type stirring head, the disc type stirring head comprises a plurality of stirring wings, and the stirring wings are connected with the filling basket and a stirring disc. The connecting ends of the stirring wings are mutually connected, the stirring ends extend to the edge part of the stirring disc, and a liquid through hole is formed in the side wall of the filler basket; in the process of preparing and processing the magnesium alloy, the disc type stirring head can accelerate diffusion, the disc type stirring head rotates to divide molten liquid into an upper layer and a lower layer, the molten liquid on the upper layer forms a solution vortex, and diffusion of intermediate alloy elements is accelerated; and the lower-layer melt is kept relatively static, so that the precipitated slag is prevented from turning upwards, the slag precipitation time is shortened, and the productivity is improved.