Germanium silicon heterojunction bipolar transistor and manufacturing method thereof

Abstract

The invention discloses a germanium silicon heterojunction bipolar transistor. A groove is formed in the bottom of shallow groove field oxygen in the circumstance of an active region, polycrystalline silicon is filled in the groove, a polycrystalline silicon burying layer is formed by the polycrystalline silicon filled in the groove, N type impurities are mixed with the polycrystalline silicon burying layer, the N type impurities further spread to a silicon substrate in the circumstance of the polycrystalline silicon burying layer to form a first N type impurities region, a collector connecting layer is formed by the polycrystalline silicon burying layer and the first N type impurities region, the collector connecting layer is contacted with a collector region at the bottom of the shallow groove field oxygen, and a deep hole contact area is formed in the shallow groove field oxygen on the top of the pseudo buried layer and leads a collector out. The invention further discloses a manufacturing method of the germanium silicon heterojunction bipolar transistor. According to the germanium silicon heterojunction bipolar transistor and the manufacturing method thereof, the thickness of the collector connecting layer can be increased to enable the distribution of impurities to be even, the resistance and the contact resistance of the collector connecting layer can be reduced and the value of the resistance and the contact resistance are enabled to be even, and thus the cut-off frequency of the germanium silicon HBT (SiGe HBT) can be improved.

Description

Technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a silicon germanium heterojunction bipolar transistor; the invention also relates to a manufacturing method of a silicon germanium heterojunction bipolar transistor. Background technique [0002] In RF applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technology, it is still difficult to fully meet the RF requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz and advanced technology. The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the high material cost, small size, and most compound semiconductors are toxic, their applications are limited. Silicon germanium (SiGe) heterojunction bipolar transistor (HBT...

AI Technical Summary

Problems solved by technology

The technology of this device is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 2. The formation of collector pick-up depends on high-dose and high-energy ion implantation to lead out the buried layer of the collector area. The device area is large; 3. The deep trench isolation process is complicated and the cost is high; 4. The number of photolithography layers in the HBT process is large

[0005] There are also some problems in the existing improved process. For example, the junction formed by low-energy N-type impurity implantation is relatively shallow, resulting in a thinner N-type buried layer (Pseudo Buried Layer), and the resistance of the collector connection layer (Rc) is relatively low. High, and the contact resistance is too large, making it difficult to increase the cut-off frequency (Ft)

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