Si/CoSi2 substrate material on imaging insulation body and preparing method thereof

Abstract

The invention provides a Si / CoSi2 substrate material on an imaging insulation body and a preparing method thereof. The method includes that an imaging metal Co layer is manufactured through lift-on technology, the Co layer and a Si substrate conduct twice reacting to form CoSi2, transferring of the CoSi2 is conducted through an intelligent peeling process, a layer of metal silicide CoSi2 is inserted into a partial region between a BOX layer and top layer silicon of a traditional silicon-on-insulator (SOI) substrate so as to replace a heavy doping buried layer of a collector region in a conventional SOI bipolar transistor, regions in which no CoSi2 is inserted are used for manufacturing metal oxide semiconductor (MOS) devices, and the aims that the thickness of the top layer silicon is reduced, a process is simplified and the like are achieved. The preparing method is simple in process and suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a patterned Si / CoSi on insulator 2 Substrate material and its preparation method. Background technique [0002] BiCMOS is a new generation of high-performance VLSI process after CMOS. CMOS has become the mainstream process of VLSI in 80 years with low power consumption and high density. As the size is gradually reduced, the circuit performance is continuously improved, but when the size drops below 1um, its potential is greatly limited due to carrier velocity saturation and other reasons. The basic idea of ​​integrating CMOS and Bipolar on the same chip is to use CMOS devices as the main unit circuit, and add bipolar devices or circuits where it is required to drive large capacitive loads. High speed, low power consumption. Therefore, BiCMOS circuits not only have the advantages of high integration and low power consumption of CMOS circuits, but also have the advantages of high-...

AI Technical Summary

Problems solved by technology

[0004] The traditional SOI substrate includes a back substrate, an insulating layer, and the top layer of silicon on the insulating layer. The manufacture of general SOI bipolar circuits and BiCMOS circuits needs to make a heavily doped buried layer in the traditional SOI top layer of silicon to reduce the Collector resistance and increase the breakdown voltage of the substrate, however, such manufacturing process steps are complicated, and occupy part of the space of the top layer of silicon, increasing the thickness of the top layer of silicon

Moreover, the traditional SOI BICMOS process generally manufactures bipolar circuits and CMOS circuits on the top layer of silicon with the same thickness as the traditional SOI. As a result, the SOI CMOS circuit is difficult to achieve full depletion during operation, which greatly reduces the operating speed of the SOI CMOS circuit and affects the improvement of the operating speed of the BICMOS circuit.

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