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A chemical-mechanical polishing fluid for planarization of through-silicon via barrier layer

A chemical machinery, polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve problems such as no commercial product reports, and achieve high correction ability and good stability.

Active Publication Date: 2016-11-23
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research on special CMP polishing fluid for TSV technology is very active, but there is no commercial product report so far, especially the polishing fluid for TSV barrier layer

Method used

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  • A chemical-mechanical polishing fluid for planarization of through-silicon via barrier layer
  • A chemical-mechanical polishing fluid for planarization of through-silicon via barrier layer
  • A chemical-mechanical polishing fluid for planarization of through-silicon via barrier layer

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Experimental program
Comparison scheme
Effect test

Embodiment 1～9

[0042] Table 1, chemical mechanical polishing liquid embodiment 1~9 of the present invention and reference polishing liquid

[0043]

[0044]

[0045] BTA: benzotriazole, TTA: methylbenzotriazole, PAA: polyacrylic acid, AEP01, 02, 03 are different types of alkyl phosphate salts.

[0046] The silicon nitride inhibitor of the present invention is an alkyl phosphate ester salt: for example, alkyl phosphate ester sodium salt (potassium salt), alkyl phosphate ester diethanolamine salt, alkyl phosphate ester triethanolamine salt.

[0047]

[0048] R: C8-C12 alkyl, n=2,3

[0049] AEP01: n=2, namely alkyl phosphate diethanolamine salt

[0050] AEP02: n=3, namely alkyl phosphate triethanolamine salt

[0051] AEP03: Alkyl phosphate potassium salt

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Abstract

A chemical-mechanical polishing solution for flattening of a through silicon via (TSV) barrier layer at least comprises an abradant and a silicon nitride polishing rate inhibitor. The polishing solution has a high silicon dioxide removal rate and a low silicon nitride removal rate, can effectively flatten the TSV barrier layer without causing metallic corrosion and can linearly adjust the copper removal, and has high defect correction capability and low surface contaminant index.

Description

technical field [0001] The invention discloses a chemical mechanical polishing liquid, more specifically, the invention discloses a chemical mechanical polishing liquid used for planarizing the barrier layer of through-silicon holes. Background technique [0002] With the development of CMOS process development, the feature size of the device is gradually reduced, and the circuit density becomes more complex. The resulting design and manufacturing become more difficult, and the signal congestion in the interconnection process is further aggravated. Miniaturization and ultra-high Integration is getting closer to its physical limit. In order to continue Moore's Law, solve the delay problem of copper interconnection, and meet the requirements of performance, bandwidth and power consumption, 3D IC integration technology has gradually developed. [0003] That is, the chips are stacked in the vertical direction, and the efficient interconnection is directly realized through the ac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 宋伟红姚颖孙展龙
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD