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A self-focusing vertical cavity surface emitting laser

A technology of vertical cavity surface emission and automatic focusing, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., and can solve the complex system, the output power of the device is only on the order of milliwatts, and the repetitive mechanical processing and assembly of beam convergence. and other problems to achieve the effect of good repeatability, simple manufacturing process and easy promotion

Active Publication Date: 2014-10-15
长春中科长光时空光电技术有限公司
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Problems solved by technology

[0007] In order to solve the problem that when the existing vertical cavity surface emitting laser realizes converging the laser beam to a certain plane far from the light-emitting surface to form a high-power-density laser spot through the beam shaping device, the shaping device causes the system to be too complicated and the beam convergence repeatability Affected by mechanical processing and assembly, the surface integrated microlens technology is only suitable for small-diameter VCSELs, and the output power of the device is only on the order of milliwatts. The present invention proposes an auto-focusing vertical cavity surface emitting laser

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  • A self-focusing vertical cavity surface emitting laser
  • A self-focusing vertical cavity surface emitting laser
  • A self-focusing vertical cavity surface emitting laser

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] Such as Figure 1 to Figure 7 As shown, an autofocus vertical cavity surface emitting laser of the present invention includes: a lower electrode 1 , a P-type DBR layer 2 , an active layer 3 , an N-type DBR layer 4 , a substrate layer 5 and an upper electrode 6 . N-type DBR layer 4 is grown on the lower end of substrate layer 5 , and active layer 3 , P-type DBR layer 2 and lower electrode 1 are grown sequentially on the lower end of N-type DBR layer 4 . The upper electrode 6 is grown on the upper end surface of the substrate layer 5 . The lower electrode 1, the P-type DBR layer 2 and the active layer 3 jointly form a P-type semiconductor mesa.

[0021] When making the laser according to the present invention: first utilize dry etching to process the shape of the P-type DBR layer 2 according to the expected spot shape, and when it is necessary to obtai...

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Abstract

The invention discloses a vertical-cavity surface-emitting laser capable of automatically focusing, and belongs to the field of semiconductor lasers. The vertical-cavity surface-emitting laser capable of automatically focusing comprises a P-type DBR (distributed Bragg reflective) layer, an active layer, an N-type DBR layer, a lining layer, a lower electrode wrapped on the P-type DBR layer, and an upper electrode laid on the lining layer. A part, covered on a light emitting window, of the upper electrode is shaped in a concentric ring or a structure with unequally spaced grid bars or crossed grid bars, the upper electrode with the above structure can be formed via the lift-off technology by one step, with the upper electrode, output laser light beams can be focused into a point light spot, or a linear light spot or a cross light spot without additionally adding a light beam shaping device, laser power intensity is greatly enhanced partly, and wide application requirements are met. The vertical-cavity surface-emitting laser capable of automatically focusing is simple in manufacturing technology, good in repeatability and easy to popularize.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to an autofocus vertical cavity surface emitting laser. Background technique [0002] Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) is a new type of semiconductor laser. Compared with edge-emitting semiconductor lasers, it has the advantages of low manufacturing cost and high reliability. It is easy to increase its output power through two-dimensional integration. At present, the output power level of VCSEL has reached the practical level. [0003] Since the light output direction of VCSEL is perpendicular to the direction of its substrate, the most direct way to increase its output power is to increase the area of ​​the light-emitting region. However, the increase in the area of ​​the light-emitting region leads to the power density of the output laser is generally only on the order of kilowatts per square centimeter, while At present, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
Inventor 张星宁永强秦莉刘云王立军
Owner 长春中科长光时空光电技术有限公司
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