Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium arsenide processing device and processing method

A technology of processing equipment and processing methods, applied in the direction of improving process efficiency, etc., can solve problems that are not conducive to operation and personnel safety, and achieve the effect of being conducive to operation and personnel safety and high recovery rate

Inactive Publication Date: 2013-07-03
FIRST SEMICON MATERIALS
View PDF8 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method produces highly toxic arsenic trioxide, which is not conducive to operation and personnel safety

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium arsenide processing device and processing method
  • Gallium arsenide processing device and processing method
  • Gallium arsenide processing device and processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Gallium arsenide scrap is irregular flake and small particle powder with a thickness of about 2mm. Take 100g of gallium arsenide waste as a raw material, add it to the quartz boat, and put the quartz boat into the sealing end of the quartz tube. Put the quartz tube into the heating zone of the horizontal crystal growth furnace, and place the open end of the quartz tube in the air and connect with the vacuum unit. Turn on the vacuum unit, and when the pressure inside the quartz tube is 2pa, start the heating program of the horizontal crystal growth furnace to raise the temperature to 1000°C and keep it for 3h. The vacuum state is naturally cooled to obtain 46g gallium and 40g arsenic.

[0034] In terms of mass, the recovery rate of gallium and arsenic is 86%.

Embodiment 2

[0036] Gallium arsenide scrap is irregular flake and small particle powder with a thickness of about 2mm. Take 100g of gallium arsenide waste as a raw material, add it to the quartz boat, and put the quartz boat into the sealing end of the quartz tube. Put the quartz tube into the heating zone of the horizontal crystal growth furnace, and place the open end of the quartz tube in the air and connect with the vacuum unit. Turn on the vacuum unit, and when the pressure inside the quartz tube is 5pa, start the heating program of the horizontal crystal growth furnace to heat up to 1050°C and keep it for 2.5h. Naturally cooled in a vacuum state, 46.8g gallium and 41.2g arsenic are obtained.

[0037] In terms of mass, the recovery rate of gallium and arsenic is 88%.

Embodiment 3

[0039] Gallium arsenide scrap is irregular flake and small particle powder with a thickness of about 2mm. Take 100g of gallium arsenide waste as a raw material, add it to the quartz boat, and put the quartz boat into the sealing end of the quartz tube. Put the quartz tube into the heating zone of the horizontal crystal growth furnace, and place the open end of the quartz tube in the air and connect with the vacuum unit. Turn on the vacuum unit, when the pressure inside the quartz tube is 9pa, start the heating program of the horizontal crystal growth furnace to raise the temperature to 1100°C and keep it for 2h. Naturally cooled in a vacuum state, 46.2g gallium and 40g arsenic are obtained.

[0040] In terms of mass, the recovery rate of gallium and arsenic is 86.2%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a gallium arsenide processing device and a processing method, the processing device comprises a quartz boat used for placing a waste gallium arsenide material; a quartz tube with an closed end and an opened end, wherein the quartz boat used for placing a waste gallium arsenide material is placed at the closed end; a horizontal crystal growth furnace which comprises a horizontal crystal growth furnace heating zone, wherein the horizontal crystal growth furnace heating zone encircles the closed end of the quartz tube and the quartz boat in the quartz tube; a sealing member used for enclosing the opened end of the quartz tube; and a vacuum set communicated to the quartz tube through the sealing member. According to the invention, metal gallium and simple substance arsenic can be directly separated, the gallium recovery rate is high, and the cost is low, the technology and device can be simplified, the processing device and the processing method have no pollution on environment, no noxious material is generated, and the processing device and the processing method are in favor of operation and staff safety.

Description

Technical field [0001] The invention relates to a processing equipment and a processing method for metal compounds, in particular to a processing equipment and a processing method for gallium arsenide. Background technique [0002] Metal gallium (Ga) is a rare metal with very little content in the earth's crust. In nature, it cannot form a gallium deposit with mining value alone. It is associated with sulfide gallium copper ore and aluminum, zinc, germanium, and germanium-bearing coal in an isomorphous state. In other mines, gallium can only be comprehensively recovered from by-products such as aluminum, zinc, and germanium. At present, there are two main methods for producing gallium in the world: extraction method and recycling method, of which 85% are produced by recycling method, and the main raw material is gallium arsenide (GaAs) waste. This is because of the superior performance of GaAs, which is widely used in electronic devices and optical devices. However, in the proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C22B30/04C22B58/00
CPCY02P10/20
Inventor 李琼芳朱刘
Owner FIRST SEMICON MATERIALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com