Long-narrow trench mask plate for vapor plating

A mask plate, narrow and long technology, which is applied in the field of long and narrow trench mask plates for evaporation, can solve the problems of not being able to reach the substrate, and achieve the effects of improving service life, reducing costs, and avoiding deformation of the plate surface

Inactive Publication Date: 2013-07-17
KUN SHAN POWER STENCIL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The technical problem to be solved by the present invention is that in the existing OLED manufacturing technology, the organic particles cannot reach the substrate due to the shielding of the opening wall during evaporation. A new long and narrow trench mask for evaporation is provided. The template has the advantages of high utilization rate of organic materials, high film formation rate, long service life of the mask plate, and cost saving

Method used

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  • Long-narrow trench mask plate for vapor plating
  • Long-narrow trench mask plate for vapor plating
  • Long-narrow trench mask plate for vapor plating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A 50μm-thick slit trench mask for evaporation, such as figure 2The shape shown is a rectangular metal plate, including the ITO surface in contact with the indium tin oxide (ITO) surface and the evaporation surface. The openings on the ITO surface coincide with the centers of the openings on the evaporation surface, and the groove-shaped openings are spaced apart from each other and parallel to each other; the area of ​​the openings on the ITO surface is smaller than that on the evaporation surface.

[0037] Invar alloy is selected as the mask material, and the etching process is used to form half-cut from the ITO surface of the mask, such as Figure 5 The long and narrow opening 02, the depth of the opening 02 is 15 μm, and the lateral dimension of the opening 02 is 70 μm; it is formed by etching from the evaporation surface 5 of the mask plate as Figure 5 The middle opening 01 is narrow and long, and the centers of the openings on both sides are coincident. The ...

Embodiment 2

[0041] A long and narrow trench mask for evaporation, the transverse section is as follows figure 2 As shown, the thickness is 50 μm, and the shape is a quadrilateral metal plate, including two surfaces of the ITO surface 4 and the evaporation surface 5 that are in contact with the indium tin oxide (ITO) surface. The mask plate has a through ITO surface and the evaporation surface The size of the grid-shaped openings 1 on the ITO surface is smaller than the size of the narrow groove-shaped openings 2 on the evaporation surface. Invar alloy is selected as the mask material, and the double-sided etching process is adopted. image 3 It is a schematic diagram of the cooperation between the mask plate and the ITO surface.

[0042] 4 etch from the ITO side of the mask to form as figure 2 Opening 1 on the ITO surface of the middle mask, the depth of opening 1 is 15 μm, and the lateral dimension is 70 μm, etched from the evaporation surface 5 of the mask to form figure 2 Opening...

Embodiment 3

[0045] A long and narrow groove mask plate for evaporation, with a thickness of 100 μm and a shape of a quadrilateral metal plate, including two surfaces of an ITO surface and an evaporation surface. The size of the opening on the ITO surface is smaller than that on the evaporation surface.

[0046] The long and narrow groove mask for evaporation is a quadrilateral nickel-cobalt alloy metal plate, the opening depth of the ITO surface of the mask is 25 μm, and the lateral dimension is 50 μm. The centers of the slot-shaped openings coincide, and the centers of the openings on the evaporation surface are symmetrical, with a depth of 75 μm and a lateral dimension of 100 μm, and the walls of the openings on the evaporation surface have a certain concave arc, forming an evaporation angle of 30°. By separately controlling the etching time of the ITO surface and the evaporation surface, the required depths of the ITO surface opening and the evaporation surface opening are obtained. T...

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Abstract

The invention relates to a long-narrow trench mask plate for vapor plating, and aims to mainly solve the technical problem that organic particles cannot reach a substrate due to shadowing of a mask plate aperture wall during vapor plating in the existing OLED (organic light-emitting diode) manufacturing technologies. The long-narrow trench mask plate for vapor plating adopted in the invention is a quadrilateral metal plate, which comprises an ITO (indium tin oxide) surface in contact with an ITO and a vapor plating surface. The mask plate is equipped with long-narrow trenches running through the ITO surface and the vapor plating surface, and the aperture size of the long-narrow trenches on the ITO surface is smaller than that on the vapor plating surface. According to the technical scheme, the problem is well solved. Thus, the long-narrow trench mask plate for vapor plating can be used in the industrial production of organic light-emitting diodes.

Description

[0001] technical field [0002] The invention relates to a long and narrow trench mask plate for vapor deposition required in the OLED manufacturing process. [0003] Background technique [0004] Generally, an OLED device is an emissive display device that emits light by electrically exciting a fluorescent organic compound. The OLED device can be regarded as a passive matrix OLED (PMOLED) device or an active matrix OLED (AMOLED) device according to a driving manner of N×M pixels that can be arranged in a matrix. Compared with PMOLED devices, AMOLED devices are suitable for large-sized displays due to their low power consumption and high resolution. [0005] Depending on the direction in which light is emitted from the organic compound, the OLED device can be a top-emitting OLED device, a bottom-emitting OLED device, or a top and bottom-emitting OLED device. Top-emitting OLED devices emit light in the opposite direction to the substrate on which the pixels are dispo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/24H01L51/56
Inventor 魏志凌高小平郑庆靓
Owner KUN SHAN POWER STENCIL
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