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Preparation method of graphene radiating fins

A technology of graphene and heat sink, which is applied in the field of microelectronic packaging, can solve problems that affect the electrical performance, mechanical strength and reliability of the chip, reduce the stability of the chip, and increase the error rate.

Inactive Publication Date: 2013-07-24
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Due to the sharp increase in power consumption per unit volume, and most of the power consumption is converted into heat energy, the resulting excessive temperature will reduce the working stability of the chip and increase the error rate. At the same time, the thermal stress formed between the inside of the module and its external environment It will directly affect the electrical performance, mechanical strength and reliability of the chip

Method used

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  • Preparation method of graphene radiating fins
  • Preparation method of graphene radiating fins

Examples

Experimental program
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Effect test

Embodiment 1

[0011] (1) Deposit a layer of copper with a thickness of 1 micron on the surface of silicon dioxide by conventional electron beam evaporation method, and the purity of copper is 99.9%.

[0012] (2) Pass acetylene, hydrogen and argon into the reaction chamber of the Aixtron Black Magic deposition system, react at 900 degrees Celsius for 5-10 minutes, and grow graphene on the surface of silicon dioxide deposited with copper by chemical vapor deposition , The flow ratio of acetylene and hydrogen is 1:2 to 1:4, and the flow rate of acetylene is 5~10 standard cubic centimeters per minute (sccm).

[0013] (3) After cooling, spin-coat a layer of 300nm polymethyl methacrylate on the copper surface.

[0014] (4) Use 30% ferric chloride to etch copper for 20 minutes.

[0015] (5) Transfer the graphene spin-coated with polymethyl methacrylate to the target chip.

[0016] (6) The polymethyl methacrylate was removed with acetone, and finally the graphene heat sink was obtained.

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Abstract

The invention relates to a technology for preparing and transferring graphene radiating fins. The technology comprises the following steps of: using an electron beam evaporation method to deposit a copper layer on the surface of silicon dioxide; then growing graphene on the copper layer of the surface of the silicon dioxide by a chemical vapor deposition method, and transferring the graphene onto a target chip by a transferring technology. Therefore, a clean and ultrathin radiating material with extremely-high specific surface area, high heat conductivity and heat stability and high elasticity is obtained.

Description

technical field [0001] The patent of the present invention belongs to the field of microelectronic packaging. The main purpose of the patent of the present invention is to provide a graphene heat sink preparation and transfer technology, which has a very high specific surface area, high thermal conductivity and thermal stability, high elasticity, ultra-thin and clean heat dissipation material. Background technique [0002] With the miniaturization, miniaturization, high performance and low cost development requirements of electronic products, the integration level of large-scale integrated circuits continues to increase, and the feature size of devices continues to shrink. While the chip integration level is improved and the performance is enhanced, it also brings high power. Due to the sharp increase in power consumption per unit volume, and most of the power consumption is converted into heat energy, the resulting excessive temperature will reduce the working stability of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48
Inventor 刘建影
Owner SHANGHAI UNIV
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