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Membrane laminated wiring for electronic components

A technology for stacking wiring films and electronic components, applied in electrical components, coatings, circuits, etc., can solve the problems of substrate residue, height difference of stacked wiring films, and low adhesion between Cu and substrates, and achieves improved reliability, The effect of improving heat resistance

Active Publication Date: 2013-07-31
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Cu and ITO can achieve electrical conductivity, but since the adhesion between Cu and the substrate is low, it is necessary to make a laminated wiring film covered with Mo or Mo alloy or the like to ensure the adhesion.
[0005] In addition, an etchant containing phosphoric acid and nitric acid used for etching a conventional laminated wiring film composed of a Mo cladding layer and an Al main conductive layer is applied to a laminated wiring film composed of a Mo cladding layer and a Cu main conductive layer. When the film is used, the Cu main conductive layer may be rapidly etched to cause a height difference in the laminated wiring film
When adjusting the concentration of the etchant to suppress the height difference, there is a problem that residues are generated on the substrate, etc.

Method used

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  • Membrane laminated wiring for electronic components
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  • Membrane laminated wiring for electronic components

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] First, a sputtering target for forming a Cu alloy layer serving as a coating layer is prepared. It weighed according to the predetermined composition shown in Table 1, melt|melted and cast in the vacuum melting furnace, and produced the ingot of Cu alloy. Then, sputtering targets with a diameter of 100 mm and a thickness of 5 mm were fabricated from each ingot by machining.

[0055] In addition, the Cu sputtering target material for forming a main conductive layer was cut out from the oxygen-free copper (OFC) material manufactured by Hitachi Electric Cable Co., Ltd., and produced. In addition, as the Al sputtering target, the sputtering target made by Sumitomo Chemical Co., Ltd. was used.

[0056] Each sputtering target material obtained by the above-mentioned production was brazed with the backing plate made from Cu, and it attached to the sputtering apparatus of the model number: CS-200 by ULVAC, Inc. make.

[0057] Use the prepared sputtering targets on a glass sub...

Embodiment 2

[0068] Next, etching property evaluation was performed. Using the etchant Cu-02 for Cu manufactured by Kanto Chemical Co., Ltd., a photoresist was applied to only half of the area of ​​the laminated wiring film for electronic components obtained on the substrate produced in Example 1 and made After drying, immerse in an etchant solution, and etch the uncoated part. The immersion time was set to 10 seconds after the end of visual etching, and the undissolved sample was set to a maximum of 5 minutes.

[0069] The substrate lifted from the etchant was washed with pure water and dried, and the vicinity of the boundary between the dissolved portion and the undissolved portion coated with the resist was observed with an optical microscope. The results are shown in Table 1.

[0070] Al of sample No. 10, which is a comparative example, does not dissolve in the etchant for Cu. In addition, in samples No. 7 to No. 9 which are comparative examples, it was confirmed that a level differ...

Embodiment 3

[0073] Using each sputtering target shown in Table 2 produced in Example 1, a laminated wiring film for electronic components was formed on a polyimide film of 100 mm×100 mm under the same conditions as in Example 1. A laminated wiring film for each electronic component is wound on a glass tube with a diameter of 10 mm, and a 25 mm wide transparent adhesive tape (product name: transparent beauty color) manufactured by Sumitomo3M Limited is attached to the electronic component with a rubber scraper The surface of the wiring film was laminated, taking care not to leave air bubbles, and peeled at an angle of inclination of 45° to evaluate the adhesion. The results are shown in Table 2.

[0074] Table 2

[0075]

[0076] As shown in Table 2, in the Al film of Sample No. 16 as a comparative example, it was confirmed that film peeling occurred everywhere. On the other hand, in the laminated wiring films for electronic components of samples No. 12 to No. 15 which are examples of...

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Abstract

The invention provides a membrane laminated wiring for electronic components, which uses the following covering layer in the membrane laminated wiring using Cu as the main conducting layer, and the covering layer can ensure the close adaptation of a substrate and a baseplate required by the covering layer, and a heat resistance of the upper layer (protection membrane) on the surface of Cu for protecting the main conducting layer, thereby maintaining the low resistance valve even after heating process. A membrane laminated wiring for electronic component is provided, which is for the electronic component of substrate with metal layers, and contains a main conducting layer using Cu as the main component, and a convering layer which covers at least one surface of the main conducting layer, and the composing formula of the atom ratio of the covering layer is Cu100-X-AlX, 20<=X<=60, and the remain is composed of Cu alloy containing inevitable impurities.

Description

technical field [0001] The present invention relates to a laminated wiring film for electronic components that requires adhesion to a substrate and heat resistance during heat treatment. Background technique [0002] A liquid crystal display (hereinafter referred to as LCD, LiquidCrystalDisplay), a plasma display panel (hereinafter referred to as PDP, PlasmaDisplayPanel), which forms a thin film device on a glass substrate, and a flat display device such as an electrophoretic display used in electronic paper or the like (flat panel display, Hereinafter referred to as FPD, FlatPanelDisplay), and in thin film electronic components such as various semiconductor devices, thin film sensors, and magnetic heads, wiring films with low resistance values ​​are required. For example, FPDs such as LCDs, PDPs, and organic EL displays have large screens, high definition, and high-speed response, and the wiring films of thin-film transistors (TFTs) used as their driving elements need to ha...

Claims

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Application Information

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IPC IPC(8): H01L29/45H01L29/49C23C14/14C23C14/34
CPCH01L21/283H01L21/76838
Inventor 村田英夫
Owner HITACHI METALS LTD
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