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Preparation method of ultrahigh nitrogen doped graphene

A graphene and high-doping technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of long preparation process, raw material loss, low nitrogen doping content, etc., and achieve the regulation of graphene band gap Effect

Inactive Publication Date: 2013-08-21
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, so far, the method of obtaining nitrogen-doped graphene is the method of heat treatment, the content of nitrogen doping is often not high, and the effect of adjusting the band gap of graphene is not significant.
Moreover, nitrogen doping will bring about the decomposition of graphene oxide, resulting in the loss of raw materials.
The preparation process is time-consuming and causes a great waste of energy

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) 100 mg of graphene oxide with 1 to 20 layers was added to 300 ml of 0.0001 mol / l dilute nitric acid solution for cleaning, and then centrifuged at a centrifugal speed of 10,000 rpm to obtain a precipitate.

[0019] (2) Repeat step (1) twice, then add deionized water, centrifuge at 10,000 rpm to obtain a precipitate, repeat the process of adding deionized water and centrifuging 10 times to ensure that no other impurities are contained; the obtained graphene oxide has a relatively high oxygen content High, wherein the oxygen-carbon atomic ratio is 2:5; after drying the obtained graphene oxide precipitation at a temperature of 50°C in a natural environment, put it into a quartz container with low light absorption rate of 200-760nm wavelength.

[0020] (3) Connect both ends of the quartz container with rubber tubes to ensure a closed state and no air penetration. Connect high-purity ammonia gas (99%) to one side of the quartz container, and the other side is passed into...

Embodiment 2

[0025] (1) 100 mg of graphene oxide with 1 to 20 layers was added to 300 ml of 0.001 mol / l dilute nitric acid solution for cleaning, and then centrifuged at a centrifugal speed of 10,000 rpm to obtain a precipitate.

[0026] (2) Repeat step (1) twice, then add deionized water, and centrifuge at 10,000rpm to obtain a precipitate; repeat the process of adding deionized water and centrifuging 10 times to ensure that no other impurities are contained; the oxygen content of the obtained graphene oxide should be Higher, wherein the oxygen-carbon atomic ratio is 2:5; after drying the obtained graphene oxide precipitation at a temperature of 50°C in a natural environment, put it into a quartz container with low light absorption rate of 200-760nm wavelength.

[0027] (2) Connect the two ends of the quartz container with rubber tubes to ensure a closed state without air penetration; connect high-purity ammonia gas (99%) to one side of the transparent container, and the other side into wa...

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PUM

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Abstract

The invention discloses a preparation method of ultrahigh nitrogen doped graphene. Ultrahigh nitrogen doped graphene is obtained by using a method for carrying out illumination on ammonia-adsorbed oxidized graphene. Unreduced oxidized graphene can be subjected to doping by using light with a wavelength range from 200 to 760 nm in a NH3 (flow: 10-30 torr) atmosphere so as to obtain doped graphene. The maximum nitrogen-carbon atom ratio can reach 20%. The illumination time is 5-60 minutes, and a corresponding nitrogen-carbon atom ratio is 6-20%. The doped nitrogen content of the ultrahigh nitrogen doped graphene disclosed by the invention can be adjusted through illumination time and illumination intensity so as to achieve an effect of adjusting the graphene band gap.

Description

technical field [0001] The invention relates to a preparation method for ultra-high nitrogen doping (the atomic ratio of nitrogen and carbon reaches up to 20%). Background technique [0002] Graphene, as the material with the smallest density, the largest specific surface area, and the best electrical conductivity in the world, has great application prospects in solar transparent electrodes, lithium batteries, and field effect transistors. [0003] The preparation methods of graphene mainly include micromechanical exfoliation, chemical vapor deposition, liquid phase exfoliation, and chemical methods. Graphene itself is a zero-bandgap semiconductor material, which greatly limits its application in microelectronic materials. It is one of the very common methods to change the band gap of graphene by doping other atoms, and the common doping methods are nitrogen doping, fluorine doping, hydrogen doping and chlorine doping, etc. Hydrogen doping can only be done by plasma method...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/205
Inventor 唐涛文剑锋
Owner GUILIN UNIVERSITY OF TECHNOLOGY