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A zinc nitride and thin film technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor stability of zinc nitride thin film and achieve high crystallization quality
Active Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, the zinc nitride thin films prepared by most methods have poor stability, and the zinc oxide thin films pr
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[0024] Example 1:
[0025] Such as figure 1 As shown, this embodiment provides a method for preparing a zinc nitride film, which specifically includes the following steps:
[0026] Step 101: Perform a standard solution cleaning treatment on the surface of the substrate, where the standard solution contains oxidizing solvents such as sulfuric acid and hydrogen peroxide, and the treated surface of the substrate adsorbs hydroxyl groups;
[0027] Step 102: Place the substrate in the reaction chamber of the atomic layer deposition equipment, which can be placed manually, placed by a robot, or placed by a software controlled robot;
[0028] Step 103: Pass a zinc-containing precursor source into the reaction chamber of the atomic layer deposition equipment, the zinc-containing precursor source reacts with the hydroxyl groups on the surface of the substrate, and the zinc atoms in the zinc-containing precursor source are adsorbed on the surface of the substrate; The precursor source is dimethy...
Example Embodiment
[0035] Example 2:
[0036] Such as figure 2 As shown, this embodiment provides yet another method for preparing a zinc nitride film, which specifically includes the following steps:
[0037] Step 101: Perform a standard solution cleaning treatment on the surface of the substrate, where the standard solution contains oxidizing solvents such as sulfuric acid and hydrogen peroxide, and the treated surface of the substrate adsorbs hydroxyl groups;
[0038] Step 102: Place the substrate in the reaction chamber of the atomic layer deposition equipment, which can be placed manually, placed by a robot, or placed by a software controlled robot;
[0039] Step 103: Pass a zinc-containing precursor source into the reaction chamber of the atomic layer deposition equipment, the zinc-containing precursor source reacts with the hydroxyl groups on the surface of the substrate, and the zinc atoms in the zinc-containing precursor source are adsorbed on the surface of the substrate; The precursor source...
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Abstract
The invention discloses a preparation method of zinc nitride thin film. The preparation method comprises following steps: (1) a substrate is placed in a reaction chamber of an atomic layer deposition apparatus; (2) a zinc-containing precursor source is delivered into the reaction chamber of the atomic layer deposition apparatus so that the zinc atoms in the zinc-containing precursor source are absorbed by the surface of the substrate; (3) a nitrogen-containing precursor source is delivered into the reaction chamber of the atomic layer deposition apparatus, and then is ionized using plasma, or a nitrogen-containing precursor source which is ionized using plasma is delivered into the reaction chamber of the atomic layer deposition apparatus, so that a part of the nitrogen atoms in the ionized nitrogen-containing precursor source are precipitated, and nitrogen-zinc covalent bonds are formed by the precipitated nitrogen atoms with the zinc atoms on the surface of the substrate; and (4) the step (2) and the step (3) are repeated, so that layer by layer growth of the zinc nitride thin film is realized. According to the preparation method, the nitrogen source is delivered into an atomic layer deposition system using the plasma; and various high-quality zinc nitride thin films with adjustable band gap are obtained by adjusting chamber temperature, vacuum degree, circulating period, conditions of the plasma, and the like.
Description
technical field [0001] The invention relates to the technical field of atomic layer deposition thin films, in particular to a preparation method of zinc nitride thin films. Background technique [0002] Zinc nitride (Zn 3 N 2 ) has an anti-sidesiderite structure, has singular electrical and optical properties, and whether zinc oxide is an indirect bandgap or direct bandgap semiconductor, and what the bandgap is has always been a controversial issue in the industry and academia. The preparation method and The difference in growth conditions also has a significant impact on the band gap. For example, in the prior art, methods such as magnetron sputtering, chemical vapor deposition, electrostatic electrolysis, and molecular beam epitaxy can be used to prepare zinc nitride thin films. However, zinc nitride thin films prepared by most methods have poor stability, and zinc oxide thin films prepared by the same method have great differences in the optical and electrical properti...
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IPC IPC(8): C23C16/34
Inventor 解婧李超波夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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