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Method for directly preparing graphene on insulation base

An insulating substrate, graphene technology, applied in the direction of graphene, nano carbon, etc., can solve the problems of affecting performance and damage, and achieve the effect of avoiding damage and simple operation.

Inactive Publication Date: 2013-08-28
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of unavoidable damage and affect its performance during the transfer process of the above-mentioned metal substrate as a catalyst for the graphene film

Method used

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  • Method for directly preparing graphene on insulation base
  • Method for directly preparing graphene on insulation base
  • Method for directly preparing graphene on insulation base

Examples

Experimental program
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Effect test

Embodiment 1

[0022] 1) Pre-treatment: Use a silicon wafer (3cm*3cm) with a 300nm silicon dioxide layer as the insulating substrate (1), clean it with absolute ethanol, acetone, and deionized water for 20 minutes, and dry it with nitrogen; Nickel foil (2cm*2cm) with a purity of 10 microns and a purity of 99wt% is used as the metal catalyst layer (3) to be ultrasonically cleaned with acetone, isopropanol, and deionized water for 20 minutes in sequence, and dried with nitrogen;

[0023] 2) After the treatment in step 1), the silicon wafer insulating substrate (1) with silicon dioxide can be selected from various carbon polymer layers, and a layer of carbon-containing polymer (2) can be spin-coated on the silicon dioxide side , typically: one or more combinations of polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyethylene (PE), polypropylene (PP); The material layer (2) can be a corresponding solvent; the above-mentioned typical carbon polymer layer is sequentially selected fr...

Embodiment 2

[0030] 1) Pretreatment: Use a quartz sheet (3cm*3cm) as the insulating substrate (1), ultrasonically clean it with absolute ethanol, acetone, and deionized water for 20 minutes, and dry it with nitrogen; For the metal catalyst layer (3), select the copper foil (2cm*2cm) and ultrasonically clean it with acetone, isopropanol, and deionized water for 20 minutes in sequence, and dry it with nitrogen.

[0031] 2) Spin-coat a layer of carbon-containing polymer (2) PMMA (2000rpm, 60 seconds) on the quartz wafer treated in step 1); the solvent of the PMMA solution used is chlorobenzene, and the concentration is 40mg / ml; The copper foil of the obtained metal catalyst layer (3) is attached to the PMMA layer, and a certain pressure is applied to make them in close contact, and then the combination of the three is placed in an environment of 170 degrees for 1 minute to evaporate the solvent and make the combination firm.

[0032] 3) Place the combination obtained in step 2) in a CVD (Chem...

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Abstract

The invention discloses a method for directly preparing graphene on an insulation base through combining with a metal catalyst, and belongs to the technical field of graphene preparation. The method can be used for solving problems that a graphene film is frequently damaged in a catalyst base transfer process, and the performance of the graphene film is influenced and the like. The method for directly preparing the large-area graphene on the insulation base through catalyst induction comprises the following steps: A, preparing a combination of the insulation base / a carbonic polymer / the metal catalyst; B, carrying out high-temperature treatment on the combination in the non-oxidizing atmosphere, decomposing the carbonic polymer (2) so as to obtain graphene which is directly contacted with the insulation base (1); and C, etching the metal catalyst (3), and preparing the graphene. According to the method, the carbonic polymer (2) serves as a carbon source and an adhesive to be arranged between the metal and the insulation base, so that the graphene is directly contacted with the insulation base, transfer damage is avoided, and the method can be directly used for device preparation, transparent electrode application and the like.

Description

technical field [0001] The invention relates to a method for growing graphene by using metal as a catalyst on an insulating substrate, which belongs to the technical field of graphene material preparation. Background technique [0002] Graphene is a new carbonaceous material that is densely packed into a two-dimensional honeycomb lattice structure by a single layer of carbon atoms. Since it was discovered by Geim in 2004, it has attracted extensive attention of scientists due to its unique crystal structure characteristics. It has many unique physical and chemical properties, such as high specific surface area, high carrier mobility, high thermal conductivity, high mechanical strength, etc. Graphene is a zero-bandgap semiconductor with a carrier mobility 100 times higher than that of silicon. At room temperature, it has a free path as high as microns and a large coherence length. It is an ideal material for nanocircuits. In addition, graphene has a series of properties suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 王浪杨连乔张建华陈伟
Owner SHANGHAI UNIV