Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

一种单晶碳化硅液、单晶碳化硅的技术，应用在单晶碳化硅液相外延生长用种晶件和单晶碳化硅的液相外延生长领域

Inactive Publication Date: 2013-08-28
TOYO TANSO KK
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Problems solved by technology

[0009] Therefore, the MSE method can be considered to be an extremely useful method as an epitaxial growth method of single crystal silicon carbide, and research on MSE is flourishing.

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  • Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
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  • Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

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[0161] Using the sample 1 prepared above as the feed substrate 11 and the sample 3 prepared above as the seed substrate 12, a liquid phase epitaxial growth experiment of single crystal silicon carbide was performed under the same conditions as the above growth rate evaluation experiment. After that, a scanning electron microscope (SEM) photograph of the surface of the sample 3 as the seed substrate 12 was taken. in Figure 16 The SEM photograph of the surface of sample 3 is shown. according to Figure 16 The photograph shown shows that as the seed substrate 12, a polycrystalline silicon carbide film is used as the first-order diffraction peak corresponding to the polycrystalline 3C-SiC by X-ray diffraction, and the (111) crystal plane corresponding to the (111) crystal plane is observed Diffraction peaks, sample 3 with other first-order diffraction peaks having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding ...

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Abstract

Provided is an inexpensive seed material for liquid phase epitaxial growth of a silicon carbide. A seed material (12) for liquid phase epitaxial growth of a monocrystalline silicon carbide has a surface layer containing a polycrystalline silicon carbide having a crystal polymorph of a cubic crystal system. When said surface layer is subjected to X-ray diffraction, a primary diffraction peak corresponding to a (111) crystal surface is observed and other primary diffraction peaks having a diffraction strength equal to or greater than 10% of the diffraction strength of the primary diffraction peak corresponding to the (111) crystal surface are not observed as the diffraction peaks corresponding to the polycrystalline silicon carbide having a crystal polymorph of a cubic crystal system.

Description

Technical field [0001] The invention relates to a seed piece for liquid phase epitaxial growth of single crystal silicon carbide and a method for liquid phase epitaxial growth of single crystal silicon carbide using the seed piece for liquid phase epitaxial growth of single crystal silicon carbide. Background technique [0002] Silicon carbide (SiC) is able to achieve high temperature resistance, high voltage resistance, high frequency resistance, and high environmental resistance that cannot be achieved with existing semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). Therefore, silicon carbide is expected as a semiconductor material for power supply equipment or a semiconductor material for high frequency equipment in the new era. [0003] Conventionally, as a method of growing single crystal silicon carbide, for example, the following Patent Document 1 and the like propose a sublimation recrystallization method (modified Lely method). In this modified Lely...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B19/12
CPCC30B29/36C30B28/14Y10T428/26C30B19/12H01L21/20
Inventor 鸟见聪野上晓松本强资
Owner TOYO TANSO KK
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