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Preparation method of polycrystalline silicon

A polysilicon and fluorosilicate technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of three wastes, less environmental pollution, and high temperature, and achieve optimized process conditions, mild reaction conditions, and lower temperature. Effect

Active Publication Date: 2013-09-11
POSITEC POWER TOOLS (SUZHOU) CO LTD +1
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  • Claims
  • Application Information

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Problems solved by technology

At present, the method of producing solar-grade silicon at home and abroad mostly adopts the improved Siemens method of extracting silicon and silane thermal decomposition method, and the purity can reach as high as 11 nines. The need for the development of crystalline silicon solar cells
[0004] At present, industrial silicon purification is generally achieved by metallurgical methods. Metallurgical methods mainly include the following methods: pickling method, gas blowing method, slagging method, directional solidification method, etc. This method has the advantages of low production cost, low environmental pollution, and safety. However, the polysilicon produced by conventional metallurgical methods can only reach the 4N level, and cannot be used as solar silicon wafers.
Therefore, further refining is required, which makes the method of obtaining 6N-level solar polysilicon more complicated and costly

Method used

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preparation example Construction

[0020] A method for preparing polysilicon, comprising the following steps: placing reaction raw materials in a reaction container, the reaction raw materials include fluorosilicate and a metal as a reducing agent; inserting electrodes into the reaction container, the electrodes include positive electrodes and negative electrodes, between the positive electrode and the Applying a voltage between the negative electrodes; heating and stirring the reaction raw materials under a protective gas atmosphere; continuing to heat the reaction raw materials to the first temperature, keeping the temperature for a predetermined time, and cooling to obtain the reduced product; washing the reduced product with pure water, acid and drying in sequence, Get polysilicon.

[0021] As one of the raw materials for the reaction, fluorosilicate needs to be dried before being placed in the reaction vessel, mainly to remove the water that may exist in the fluorosilicate. When the fluorosilicate contains ...

Embodiment 1

[0038] Weigh the reaction raw materials sodium fluorosilicate and metal sodium according to the weight ratio of 3:1, put the reaction raw materials into a clean three-necked glass bottle, and inject N 2 Remove the air in the bottle, add an electrode and a stirring head into the bottle, the electrode includes a positive electrode and a negative electrode. Start stirring, then continue to heat the reaction raw materials to the first temperature of 160° C., keep the temperature for 2 hours, stop stirring, and cool to room temperature. Transfer the obtained reduction product into a clean beaker filled with pure water, wash and vacuum filter, wash the product after suction filtration with pure water for 3 times, then further wash with electronically pure hydrochloric acid and vacuum filter, and finally heat it at 60°C Dry under vacuum for 12 hours.

[0039] figure 1 It is the X-ray diffraction pattern of the polycrystalline silicon that embodiment 1 makes. The final analysis by ...

Embodiment 2

[0041] In Example 2, the electrode additional voltage is 3.4V, and the corresponding first temperature is 170° C., and the rest of the preparation method is the same as that of Example 1.

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Abstract

The invention relates to a preparation method of polycrystalline silicon. The polycrystalline silicon has solar-grade purity. In the preparation process of the polycrystalline silicon, electric energy is provided to a reaction system, so that the temperature required by reaction is reduced, the reaction condition is mild, and the process condition of preparation of the polycrystalline silicon is optimized. The purity of the polycrystalline silicon is improved through the further purification process. The method has an industrialized prospect.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to the field of solar polysilicon preparation. Background technique [0002] As a renewable energy source, solar energy has many advantages and is considered to be the most important new energy source in the 21st century. my country's development space in new energy is very broad, and the solar energy industry has made remarkable progress in research and development, industrialization, and market development. Polysilicon is the basic material of the electronics industry and the solar energy industry, and the polysilicon market has grown rapidly in recent years. [0003] Polysilicon can be used as a material for solar cells, requiring a purity of six nines (99.9999%), the so-called solar-grade polysilicon or 6N-level polysilicon. At present, the method of producing solar-grade silicon at home and abroad mostly adopts the improved Siemens method of extracting silicon and silane thermal de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCY02E60/10
Inventor 陈璞陈渊
Owner POSITEC POWER TOOLS (SUZHOU) CO LTD
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