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Single-layered positive photoresist photoetching method applied to metal stripping

A positive photoresist, metal stripping technology, applied in microlithography exposure equipment, optics, optomechanical equipment and other directions, can solve the problem of metal deposition on the side wall that cannot be completely eliminated, achieve small pattern stripping process, low baking temperature , The effect of helping metal stripping

Inactive Publication Date: 2013-09-11
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Apparently, high photoresist sidewall slope angle can effectively reduce sidewall metal deposition, but cannot completely exclude sidewall metal deposition

Method used

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  • Single-layered positive photoresist photoetching method applied to metal stripping
  • Single-layered positive photoresist photoetching method applied to metal stripping
  • Single-layered positive photoresist photoetching method applied to metal stripping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A Ti / Pt / Au / Ti (600nm) metal layer is fabricated on a semiconductor substrate by using a single-layer positive photoresist photolithography process. The positive photoresist is AZ7908 positive photoresist from AZ Electronic Materials, and the developer is a positive photoresist developer containing 2.38% TMAH (tetramethylammonium hydroxide).

[0028] Its implementation steps: 1) Coating 7908 photoresist layer 2 on semiconductor substrate 1, 2) After developer treatment, exposure, and normal development, the formation of such as Figure 2A As shown in the figure, 3) Evaporation deposit metal layer 3 to semiconductor substrate 1, 7908 photoresist layer 2, such as Figure 2B As shown, 4) After stripping and removing the photoresist 2 and the metal layer 3 on it, the following Figure 2C The metal layer 3 shown.

[0029] The photolithography process used is: (1) The substrate is treated with dilute hydrochloric acid; (2) Glue coating, the thickness of the glue is 0.9μm; (3...

Embodiment 2

[0033] A Ni (150nm) metal layer was fabricated on a semiconductor substrate using a single-layer positive photoresist photolithography process. The positive photoresist is AZ7908 positive photoresist from AZ Electronic Materials, and the developer is a positive photoresist developer containing 2.38% TMAH (tetramethylammonium hydroxide).

[0034] Its implementation steps: 1) Coating 7908 photoresist layer 2 on the semiconductor substrate 1, 2) Forming a pattern after developer treatment, exposure, and normal development, 3) Evaporating and depositing the metal layer 3 on the semiconductor substrate 1, 7908 photolithography The adhesive layers 2, 4) are stripped to remove the photoresist 2 and the metal layer 3 thereon.

[0035] The photolithography process used is: (1) The substrate is treated with dilute hydrochloric acid; (2) Glue coating, the thickness of the glue is 0.9 μm; (3) Baking treatment after coating: temperature 90 ° C, time 60 seconds; (4) Containing 2.38% TMAH p...

Embodiment 3

[0040]Change the exposure focal length from 0.0 to 1.0 to get a more prominent olecranon, which is good for Ni stripping. The final stripped metal has good morphology, such as Figure 6 shown.

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Abstract

The invention provides a single-layered positive photoresist photoetching method applied to metal stripping. The single-layered positive photoresist photoetching method comprises the following steps of: (1) coating a positive photoresist layer 2 on a semiconductor base plate 1; (2) after gelatinizing of the photoresist layer 2, carrying out baking treatment to remove a part of a solvent; (3) carrying out positive photoresist developing solution treatment on the photoresist layer 2; (4) exposing the photoresist layer 2; (5) exposing the photoresist layer 2 and carrying out the baking treatment; (6) developing the photoresist layer 2, wherein a developing solution is a positive photoresist developing solution; and (7) after the photoresist layer 2 is developed, carrying out the baking treatment. The single-layered positive photoresist photoetching method disclosed by the invention has the advantages that a photoetching profile pattern with an olecranon-shaped opening is obtained so as to prevent metal of a photoresist surface layer from being connected with metal at the bottom of a photoresist pattern in an evaporation process, thereby being good for the metal stripping. Compared with a process of adopting a plurality of layers of glue to realize the metal stripping, the single-layered positive photoresist photoetching method is simple; meanwhile, the single-layered positive photoresist photoetching method has better pattern resolution than using negative photoresist, and can realize a small-line-width image stripping process.

Description

technical field [0001] The invention relates to a single-layer positive photoresist photolithography method applied to metal stripping. This method can obtain an olecranon-shaped photoresist type, and is applied to the evaporation stripping of various metal systems with a thickness within 600nm. . Background technique [0002] Evaporative metal deposition is a linear metal thin film deposition method. The lift-off metallization process is a metallization process that uses a sacrificial photoresist, that is, after photolithography, the metal is deposited on the surface of the photolithographic pattern, and then the photoresist is dissolved by a solvent, so that the metal on the photoresist The glue is dissolved and peeled off, while the metal pattern in direct contact with the substrate is preserved. Lift-off is a very general process method: all metals and their alloys and multi-metal stacks can be patterned by this method, and the lift-off process is especially suitable f...

Claims

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Application Information

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IPC IPC(8): G03F7/00G03F7/38G03F7/30G03F7/20G03F7/42
Inventor 陈谷然王雯任春江陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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