Single-layered positive photoresist photoetching method applied to metal stripping
A positive photoresist, metal stripping technology, applied in microlithography exposure equipment, optics, optomechanical equipment and other directions, can solve the problem of metal deposition on the side wall that cannot be completely eliminated, achieve small pattern stripping process, low baking temperature , The effect of helping metal stripping
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[0026] Example 1
[0027] A single-layer positive photoresist photolithography process is used to fabricate a Ti / Pt / Au / Ti (600nm) metal layer on the semiconductor substrate. The positive photoresist is AZ7908 positive photoresist from AZ Electronic Materials, and the developer is a positive photoresist developer containing 2.38% TMAH (tetramethylammonium hydroxide).
[0028] The implementation steps: 1) Coating 7908 photoresist layer on the semiconductor substrate 1, 2) After the developer treatment, exposure, and normal development, such as Figure 2A The pattern shown, 3) The metal layer 3 is evaporated and deposited on the semiconductor substrate 1, and the 7908 photoresist layer 2, such as Figure 2B As shown, 4) The photoresist 2 and the metal layer 3 thereon are removed by stripping, to obtain Figure 2C The metal layer 3 shown.
[0029] The photolithography process used is: (1) The substrate is treated with dilute hydrochloric acid; (2) The glue is coated with a thickness of ...
Example Embodiment
[0032] Example 2
[0033] A single-layer positive photoresist photolithography process is used to fabricate a Ni (150nm) metal layer on the semiconductor substrate. The positive photoresist is AZ7908 positive photoresist from AZ Electronic Materials, and the developer is a positive photoresist developer containing 2.38% TMAH (tetramethylammonium hydroxide).
[0034] Its implementation steps: 1) Coating 7908 photoresist layer on the semiconductor substrate 1, 2) Forming patterns after developer treatment, exposure, and normal development; 3) Re-evaporating and depositing the metal layer 3 on the semiconductor substrate 1, 7908 photolithography The adhesive layer 2, 4) is stripped to remove the photoresist 2 and the metal layer 3 thereon.
[0035] The photolithography process used is: (1) the substrate is treated with dilute hydrochloric acid; (2) the glue is coated with a thickness of 0.9μm; (3) the baking treatment after the glue is applied: the temperature is 90°C, the time is 60 s...
Example Embodiment
[0039] Example 3
[0040] Change the exposure focal length from 0.0 to 1.0 to obtain a more prominent olecranon, which is beneficial to the peeling of Ni. The final stripped metal has a good appearance, such as Image 6 Shown.
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