Copper indium gallium selenium solar battery device and production method thereof

A technology of copper indium gallium selenide and solar cells, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of increasing carrier recombination, affecting battery performance, shortening minority carrier life, etc., to achieve improved adhesion and good crystal quality , Improve the effect of roughness

Active Publication Date: 2013-09-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
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Problems solved by technology

As a result, the grown film has poor adhesion, poor crystal quality, fine grains, and many defects, which inc

Method used

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  • Copper indium gallium selenium solar battery device and production method thereof

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[0047] Example 1:

[0048] A copper indium gallium selenide solar cell device is a copper indium gallium selenide solar cell based on a polyimide film-soda glass composite substrate, such as figure 1 shown, composed of glass, polyimide, molybdenum back contact layer, copper indium gallium selenide absorber layer, cadmium sulfide buffer layer, transparent window layer high resistance intrinsic zinc oxide film, transparent window layer low resistance zinc aluminum oxide film and aluminum The upper electrode is composed of and formed a laminated structure, wherein the substrate is composed of soda glass and polyimide film grown on its surface, the thickness of soda glass is 2mm, and the thickness of polyimide film is 25μm; the molybdenum back contact layer includes high The resistance layer film and the low resistance layer film, wherein the thickness of the high resistance layer film is 100nm, the thickness of the low resistance layer film is 600nm; the chemical formula of the c...

Example Embodiment

[0076] Example 2:

[0077] A copper indium gallium selenide solar cell device is a copper indium gallium selenide solar cell based on a polyimide film-soda glass composite substrate, such as figure 1 shown, composed of glass, polyimide, molybdenum back contact layer, copper indium gallium selenide absorber layer, cadmium sulfide buffer layer, transparent window layer high resistance intrinsic zinc oxide film, transparent window layer low resistance zinc aluminum oxide film and aluminum The upper electrode is composed of and forms a laminated structure, wherein the substrate is composed of soda glass and polyimide film grown on its surface, the thickness of the soda glass is 2mm, and the thickness of the polyimide film is 30μm; the molybdenum back contact layer includes high The resistance layer film and the low resistance layer film, wherein the thickness of the high resistance layer film is 100nm, the thickness of the low resistance layer film is 700nm; the chemical formula o...

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Abstract

A copper indium gallium selenium solar battery device is a copper indium gallium selenium solar battery based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide, a molybdenum back contact layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffer layer, a transparence window layer high resistance intrinsic zinc oxide thin film, a transparence window layer low resistance zinc aluminium oxide thin film and an aluminum top electrode and forms a laminated structure. The production method of the copper indium gallium selenium solar battery device includes that polyimide glue is applied to the glass surface to be cured to form the polyimide film-soda glass composite substrate, all layers of thin films are prepared sequentially on the surface of the polyimide film-soda glass composite substrate, and the complete copper indium gallium selenium solar battery is separated from the soda glass substrate after the complete copper indium gallium selenium solar battery is produced to obtain the flexible copper indium gallium selenium solar battery with the polyimide film serving as the substrate. The copper indium gallium selenium solar battery device has the advantages that crystal particles of copper indium gallium selenium thin film crystals based on the polyimide film-soda glass composite substrate are large. The production method is characterized in that the flexible battery is prepared through the rigid substrate, is easy to implement and is favorable for being popularized and used in a large scale.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a copper indium gallium selenium solar cell device based on a polyimide film-soda glass composite substrate and a preparation method thereof. Background technique [0002] Copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: 1) The bandgap width of CIGS can be adjusted in the range of 1.04eV-1.67eV; 2) CIGS is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 , the thickness of the copper indium gallium selenide absorbing layer is only 1.5-2.5 μm, and the thickness of the whole battery is 3-4 μm; 3) Strong radiation ...

Claims

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Application Information

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IPC IPC(8): H01L31/02H01L31/0749H01L31/18
CPCY02E10/541Y02P70/50
Inventor 薛玉明张嘉伟李微乔在祥许楠赵彦民刘君宋殿友朱亚东潘宏刚李鹏海刘浩冯少君尹富红
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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