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Graphical sapphire substrate preparation method

A patterned sapphire and patterned technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as slow exposure speed, limitations, and lithography technology limits, and achieve simple and cheap systems, large-area lithography, and high-resolution Effect

Active Publication Date: 2013-09-18
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the contradiction between resolution and depth of focus, there is a limit to lithography technology
Lithography based on particle focusing, whether it is ion beam lithography or electron beam lithography, although it has a high enough resolution and can obtain a relatively large exposure field of view by moving the workpiece stage, the slow exposure speed limits Applications in low-cost, high-volume production manufacturing processes

Method used

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  • Graphical sapphire substrate preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Prepare a patterned sapphire substrate for nitride epitaxial growth in the following order:

[0043] (1) Sputtering metal aluminum film: Use DC magnetron sputtering technology to magnetron sputter metal aluminum film of about 200nm on one surface of the sapphire substrate.

[0044] (2) Laser interference lithography: spin-coat AZ1500 photoresist on the sapphire substrate aluminum film sputtered with metal aluminum film in step (1), with a thickness of about 200nm, spin the glue at a speed of 2000r / min, and dry at 110°C for 2min; then Two laser interference exposures, the laser wavelength λ is 325nm, the exposure pattern is designed as a periodic circle, the exposure pattern period is 1μm, and the two laser beams are incident at a symmetrical angle with respect to the z axis ±θ is 9.35°, and the photoresist is processed. For the first exposure, the exposure time is 8 min, and then the substrate is rotated by 90°, and the photoresist is exposed for the second time with th...

Embodiment 2

[0049] Prepare a patterned sapphire substrate for nitride epitaxial growth in the following order:

[0050] (1) Sputtering metal aluminum film: Use DC magnetron sputtering technology to magnetron sputter metal aluminum film of about 200nm on one surface of the sapphire substrate.

[0051] (2) Laser interference lithography: spin-coat AZ1500 photoresist on the sapphire substrate aluminum film sputtered with metal aluminum film in step (1), with a thickness of about 200nm, spin the glue at a speed of 2000r / min, and dry at 110°C for 2min; then Two laser interference exposures, the laser wavelength λ is 325nm, the exposure pattern is designed as a periodic circle, the exposure pattern period is 1μm, and the two laser beams are incident at a symmetrical angle with respect to the z axis ±θ is 9.35°, and the photoresist is processed. For the first exposure, the exposure time is 8 min, and then the substrate is rotated by 90°, and the photoresist is exposed for the second time with th...

Embodiment 3

[0056] Crystal Structure Testing

[0057] The crystal structure of the prepared patterned sapphire substrate was tested by high-resolution X-ray diffractometer. Figure 6 is the scanning result of the patterned sapphire substrate (11-23) (11-23 is the crystal plane mark), Figure 7 It is the XRD-ω / 2θ scanning result of the patterned sapphire substrate (0006) (0006 is the crystal plane mark), and the result shows that the diffraction peak width at half maximum of the patterned sapphire substrate (0006) is FWHM=0.0101°. Figure 8 It is the XRD-ω / 2θ scanning result of the unpatterned sapphire substrate (0006), and the result shows that the half maximum width of the diffraction peak of the unpatterned sapphire substrate (0006) is FWHM=0.0133°. Figure 6 The XRD-Φ scanning results of the patterned sapphire substrate (11-23), the angle between (11-23) and (0006) crystal planes The sample is scanned from 0 to 360° around the surface normal n. exist Figure 6 There are 6 diffract...

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Abstract

The invention provides a graphical sapphire substrate preparation method. The method comprises the following steps: step A, carrying out magnetron sputtering on one side of a sapphire substrate so as to form a metal aluminium coating; step B, coating a photoresist film on the metal aluminium coating and drying; step C, completing laser interference exposing and developing so as to obtain a photoresist graph; step D, utilizing a graphical photoresist on the metal aluminium coating as a mask, adopting reactive ions to etch the metal aluminium coating and remove the photoresist, and obtaining the graphical metal aluminium coating of a metal aluminium coating boss on the sapphire substrate; step E, carrying out low-temperature heat treatment so as to sufficiently oxidize the graphical metal aluminium coating to form a graphical polycrystal Al2O3 film; and step F, carrying high-temperature heat treatment on the obtained graphical polycrystal Al2O3 film, and completely converting the graphical polycrystal Al2O3 film into a graphical single-crystal Al2O3 film so as to obtain the graphical sapphire substrate. The graphical sapphire substrate preparation method is simple and practical in technology, low in cost and large in area.

Description

technical field [0001] The invention relates to a method for preparing a patterned sapphire substrate, in particular to a method for preparing a low-cost, large-area patterned sapphire substrate for nitride extension growth. Background technique [0002] In recent years, high-brightness and high-power nitride light-emitting diodes (LEDs) have attracted much attention, and they are widely used in traffic lights, LCD backlights, solid-state lighting, and full-color display screens. These commercial products require LEDs to have excellent performance in terms of luminance and luminous efficiency. Sapphire has the advantages of stable chemical and physical properties, good light transmission, and reasonable cost, so it is widely used in nitride epitaxial substrates. However, due to the huge difference in lattice constant mismatch and thermal expansion coefficient mismatch between the nitride epitaxial film and the sapphire substrate at the bottom, the use of hydride vapor phase...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 张化宇汪桂根崔林韩杰才
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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