Graphical sapphire substrate preparation method

A patterned sapphire and patterned technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as slow exposure speed, limitations, and lithography technology limits, and achieve simple and cheap systems, large-area lithography, and high-resolution Effect

Active Publication Date: 2013-09-18
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the contradiction between resolution and depth of focus, there is a limit to lithography technology
Lithography based on particle focusing, whether it is ion beam lithography or electron beam lithography, althou

Method used

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  • Graphical sapphire substrate preparation method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0041] Example 1

[0042] Prepare the patterned sapphire substrate for nitride epitaxial growth according to the following sequence:

[0043] ⑴ Sputtering metal aluminum film: using DC magnetron sputtering technology to magnetron sputter about 200nm metal aluminum film on one surface of the sapphire substrate.

[0044] (2) Laser interference lithography: In step (1), the AZ1500 photoresist is spin-coated on the sapphire substrate aluminum film sputtered with the metal aluminum film, the thickness is about 200nm, the spinning speed is 2000r / min, and the drying is carried out at 110°C for 2min; Double laser interference for two exposures, the laser wavelength λ is 325nm, the exposure pattern is designed as a periodic circle, and the exposure pattern period is 1μm. The two laser beams are incident at a symmetrical angle with respect to the z axis. ±θ is 9.35°. For the first exposure, the exposure time was 8 minutes, and then the substrate was rotated 90°, and the photoresist was expose...

Example Embodiment

[0048] Example 2

[0049] Prepare the patterned sapphire substrate for nitride epitaxial growth according to the following sequence:

[0050] ⑴ Sputtering metal aluminum film: using DC magnetron sputtering technology to magnetron sputter about 200nm metal aluminum film on one surface of the sapphire substrate.

[0051] (2) Laser interference lithography: In step (1), the AZ1500 photoresist is spin-coated on the sapphire substrate aluminum film sputtered with the metal aluminum film, the thickness is about 200nm, the spinning speed is 2000r / min, and the drying is carried out at 110°C for 2min; Double laser interference for two exposures, the laser wavelength λ is 325nm, the exposure pattern is designed as a periodic circle, and the exposure pattern period is 1μm. The two laser beams are incident at a symmetrical angle with respect to the z axis. ±θ is 9.35°. For the first exposure, the exposure time was 8 minutes, and then the substrate was rotated 90°, and the photoresist was expose...

Example Embodiment

[0055] Example 3

[0056] Crystal structure test

[0057] A high-resolution X-ray diffractometer was used to test the crystal structure of the prepared patterned sapphire substrate. Image 6 Is the scan result of the patterned sapphire substrate (11-23) (11-23 is the crystal plane mark), Figure 7 It is the XRD-ω / 2θ scan result of the patterned sapphire substrate (0006) (0006 is the crystal plane mark), and the result shows that the diffraction peak half-height width FWHM of the patterned sapphire substrate (0006) is 0.0101°. Figure 8 The XRD-ω / 2θ scanning result of the unpatterned sapphire substrate (0006) shows that the diffraction peak half-height width FWHM of the unpatterned sapphire substrate (0006) is FWHM=0.0133°. Image 6 XRD-Φ scan results of the patterned sapphire substrate (11-23), the angle between (11-23) and (0006) Scan the sample from 0 to 360° around the surface normal n. in Image 6 There are 6 equally spaced diffraction peaks in the sapphire, and the difference...

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Abstract

The invention provides a graphical sapphire substrate preparation method. The method comprises the following steps: step A, carrying out magnetron sputtering on one side of a sapphire substrate so as to form a metal aluminium coating; step B, coating a photoresist film on the metal aluminium coating and drying; step C, completing laser interference exposing and developing so as to obtain a photoresist graph; step D, utilizing a graphical photoresist on the metal aluminium coating as a mask, adopting reactive ions to etch the metal aluminium coating and remove the photoresist, and obtaining the graphical metal aluminium coating of a metal aluminium coating boss on the sapphire substrate; step E, carrying out low-temperature heat treatment so as to sufficiently oxidize the graphical metal aluminium coating to form a graphical polycrystal Al2O3 film; and step F, carrying high-temperature heat treatment on the obtained graphical polycrystal Al2O3 film, and completely converting the graphical polycrystal Al2O3 film into a graphical single-crystal Al2O3 film so as to obtain the graphical sapphire substrate. The graphical sapphire substrate preparation method is simple and practical in technology, low in cost and large in area.

Description

technical field [0001] The invention relates to a method for preparing a patterned sapphire substrate, in particular to a method for preparing a low-cost, large-area patterned sapphire substrate for nitride extension growth. Background technique [0002] In recent years, high-brightness and high-power nitride light-emitting diodes (LEDs) have attracted much attention, and they are widely used in traffic lights, LCD backlights, solid-state lighting, and full-color display screens. These commercial products require LEDs to have excellent performance in terms of luminance and luminous efficiency. Sapphire has the advantages of stable chemical and physical properties, good light transmission, and reasonable cost, so it is widely used in nitride epitaxial substrates. However, due to the huge difference in lattice constant mismatch and thermal expansion coefficient mismatch between the nitride epitaxial film and the sapphire substrate at the bottom, the use of hydride vapor phase...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 张化宇汪桂根崔林韩杰才
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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