Method for preparing N-type Bi2Te3 based thermoelectric materials by refrigeration crystal bar processing waste

Abstract

The invention relates to a method for preparing N-type Bi2Te3 based thermoelectric materials by refrigeration crystal bar processing waste. The technical scheme includes that firstly, the refrigeration crystal bar processing waste is grinded, washed and dried, secondly, dried powder is placed into a gas reduction furnace, mixed gas of reducing gas and inert gas is led in, the gas reduction furnace is heated up to reach 200-550 DEG C, the temperature is kept for 1.0-5.0h and is reduced to room temperature, and the refrigeration crystal bar processing waste with impurities removed is obtained. The refrigeration crystal bar processing waste with the impurities removed is placed into a quartz tube, and according to the chemical formula (BixSb2-xTe3-ySey, wherein 1.5<=x<=2.0 and 0.1<=y<=0.7) of the N-type Bi2Te3 based thermoelectric materials, Bi, Te, Sb and Se raw materials with purity higher than 99.9wt% are added. Finally, the quartz tube is packaged in an evacuated manner and is smelted in a heating furnace at the temperature of 580-850 DEG C, the temperature is kept for 0.5-5.0h, the quartz tube is cooled along with the furnace, and an alloy ingot in the quartz tube is taken out, so that the N-type Bi2Te3 based thermoelectric materials are obtained. The method has the advantages of simple process, short recovery cycle, less environmental pollution and low cost.

Description

technical field

[0001] The present invention belongs to N-type Bi 2 Te 3 Based thermoelectric materials technology field. Specifically relates to a method of preparing N-type Bi by using refrigeration crystal bar processing waste 2 Te 3 approach to thermoelectric materials. Background technique

[0002] Thermoelectric material is a functional material that can directly convert heat energy and electric energy, and it has attracted more and more attention in today's society. Bi 2 Te 3 As the thermoelectric material with the best thermoelectric performance near room temperature, the base compound has an irreplaceable position in the process of commercial application and is widely used in the semiconductor refrigeration industry. Bi is currently commercially produced on a large scale 2 Te 3 Based thermoelectric materials are usually uniaxially grown, such as Bridgman method and zone melting method, in order to obtain Bi with excellent thermoelectric properties. 2 Te 3...

Examples

Embodiment 1

[0021] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0022] The first step, the removal of impurities from the refrigeration ingot processing waste

[0023] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 200-280°C, keep it warm for 1.0-2.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0024] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0025] Fi...

Embodiment 2

[0029] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0030] The first step, the removal of impurities from the refrigeration ingot processing waste

[0031] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, the mixed gas of reducing gas and inert gas is introduced, and then the temperature of the gas reduction furnace is raised to 280-350 ° C, kept for 2.0-3.0 hours, and finally cooled to room temperature, and the powder is taken out to obtain the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0032] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric mater...

Embodiment 3

[0037] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0038] The first step, the removal of impurities from the refrigeration ingot processing waste

[0039] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 350-420°C, keep it warm for 3.0-4.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0040] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0041] Fi...

technical field

[0001] The present invention belongs to N-type Bi 2 Te 3 Based thermoelectric materials technology field. Specifically relates to a method of preparing N-type Bi by using refrigeration crystal bar processing waste 2 Te 3 approach to thermoelectric materials. Background technique

[0002] Thermoelectric material is a functional material that can directly convert heat energy and electric energy, and it has attracted more and more attention in today's society. Bi 2 Te 3 As the thermoelectric material with the best thermoelectric performance near room temperature, the base compound has an irreplaceable position in the process of commercial application and is widely used in the semiconductor refrigeration industry. Bi is currently commercially produced on a large scale 2 Te 3 Based thermoelectric materials are usually uniaxially grown, such as Bridgman method and zone melting method, in order to obtain Bi with excellent thermoelectric properties. 2 Te 3...

Examples

Embodiment 1

[0021] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0022] The first step, the removal of impurities from the refrigeration ingot processing waste

[0023] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 200-280°C, keep it warm for 1.0-2.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0024] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0025] Fi...

Embodiment 2

[0029] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0030] The first step, the removal of impurities from the refrigeration ingot processing waste

[0031] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, the mixed gas of reducing gas and inert gas is introduced, and then the temperature of the gas reduction furnace is raised to 280-350 ° C, kept for 2.0-3.0 hours, and finally cooled to room temperature, and the powder is taken out to obtain the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0032] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric mater...

Embodiment 3

[0037] A preparation of N-type Bi by processing waste materials of refrigerated ingots 2 Te 3 approach to thermoelectric materials. The preparation steps of the method are:

[0038] The first step, the removal of impurities from the refrigeration ingot processing waste

[0039] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 350-420°C, keep it warm for 3.0-4.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0040] The second step, N-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0041] Fi...