Responsivity-adjustable silicon photodetector and manufacturing method thereof

Abstract

The invention discloses a responsivity-adjustable silicon photodetector and a manufacturing method thereof. The silicon photodetector comprises a p-type silicon substrate layer, n-type tellurium ion implanted layers, a tellurium-oxygen element-codoped silicon nanometer land layer, an antireflection film layer, front contact electrodes, protection ring contact electrodes and a back contact electrode, wherein the n-type tellurium ion implanted layers are formed by performing tellurium ion implantation on the surface of the p-type silicon substrate layer; the tellurium-oxygen element-codoped silicon nanometer land layer is formed by performing oxygen ion implantation on the surfaces of the n-type tellurium ion implanted layers; the antireflection film layer is formed on the surface of the tellurium-oxygen element-codoped silicon nanometer land layer; the front contact electrodes and the protection ring contact electrodes are formed on the surface of the antireflection film layer; and the back contact electrode is formed on the back face of the p-type silicon substrate layer. According to the responsivity-adjustable silicon photodetector and the manufacturing method thereof disclosed by the invention, a deep energy level in silicon and the energy band control function of a nanometer land structure are combined, so that he silicon photodetector has the excellent characteristics that the responsivity is enhanced along with the increase of reverse bias and the infrared expansion of a response band is realized.

Description

technical field [0001] The present invention relates to the technical field of photodetectors, in particular to a silicon photodetector with adjustable responsivity and a manufacturing method thereof, which is a silicon photodetector with adjustable responsivity and expanded near-infrared band response by using ultraviolet laser technology to prepare nanoparticles device. Background technique [0002] Silicon-based detectors have a wide range of applications. At present, a lot of efforts have been made to further expand the performance of silicon detectors. For example, for conventional silicon detectors, on the one hand, due to the 1.12ev band gap of crystalline silicon materials, they cannot absorb wavelengths greater than 1.1μm. On the other hand, although the p-n and p-i-n photodetectors made of ordinary crystalline silicon have been realized for a long time, the peak response of this kind of detector is about 900nm, and the responsivity The peak value is only between 0...

AI Technical Summary

Problems solved by technology

However, the method of strong laser ablation doping leads to serious surface damage, which leads to low mobility of black silicon, short carrier lifetime, severe Auger recombination of heavily doped surface, etc., which lead to serious detector leakage.

Wang Xiyuan et al. [6] developed a Te-doped silicon detector by using femtosecond laser doping and ultraviolet laser annealing. Compared with conventional silicon detectors, the infrared extension and high responsivity have been greatly improved, but the improvement is not very large. Big

Images