High-power press-fitted IGBT packaging module

A packaging module, crimping technology, applied in electrical components, electric solid devices, circuits, etc., can solve the problems of limiting the power range of devices, selecting new structural materials without breakthrough changes, restricting the development of devices, etc., to achieve anti-oxidation performance. Excellent, good electrical insulation, easy to make and assemble

Active Publication Date: 2014-01-29
STATE GRID CORP OF CHINA +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The full press-fit IGBT is widely used in small and medium power devices due to its excellent heat dissipation function. However, in the context of diversified requirements for energy development in the future, the total number of in

Method used

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  • High-power press-fitted IGBT packaging module
  • High-power press-fitted IGBT packaging module
  • High-power press-fitted IGBT packaging module

Examples

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Example Embodiment

[0034] The specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0035] The structure diagram of the high-power crimping type IGBT package module provided by the present invention and figure 1 The partial enlarged diagrams are as follows figure 1 with 2 As shown, the frame plate is composed of an upper cover 1, a submodule 2 (including IGBT submodules and diode submodules), a gate pin 3, and a lower base 4; the upper cover 1 is covered on the lower base 4, so The sub-module 2 is arranged between the upper cover 1 and the lower base 4, and the gate pin 3 is arranged in the groove of the insulating bottom plate 4-1 in the lower base 4; specifically:

[0036] The upper cover 1 is mainly composed of cover Dayang 1-1 and cover copper block 1-2;

[0037] Sub-module 2 is composed of top molybdenum sheet 2-1, chip 2-2, bottom molybdenum sheet 2-3, conductive silver sheet 2-4 and PBI high-performance plastic ...

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Abstract

The invention relates to the technical field of microelectronic packaging, in particular to a high-power press-fitted IGBT packaging module comprising a top cover, a submodule, gate pins, and a bottom base. The bottom base is covered with the top cover. The submodule is disposed between the top cover and the bottom base. The gate pins are disposed in sockets of an insulating bottom plate. The submodule comprises a top molybdenum plate, a chip, a bottom molybdenum plate, a conducting sliver plate and a PBI high-performance plastic frame. The top molybdenum plate, the chip, the bottom molybdenum plate and the conducting sliver plate are sequentially press-fitted from top to bottom in a recess of the PBI high-performance plastic frame. The upper surface of the top molybdenum plate contacts with the lower surface of the top cover through electrodes. The lower surface of the conducting sliver plate in the submodule is press-fitted to the upper surface of a middle projection of the bottom base. The high-power press-fitted IGBT packaging module has the advantages that production and assembly is simpler, connection reliability is better, and radiating performance is better.

Description

technical field [0001] The invention relates to the technical field of microelectronic packaging, in particular to a high-power crimping type IGBT packaging module Background technique [0002] Insulated gate bipolar transistor (IGBT) combines the gate voltage control characteristics of MOSFET and the low on-resistance characteristics of BJT, and has the characteristics of large input impedance, low driving power, low switching loss, operating frequency, high voltage, and high current. , is an almost ideal semiconductor high-power switching device with broad development and application prospects. , rail transit, aviation, ships, marine engineering and other fields. [0003] Nowadays, IGBT, as a mainstream device in the world, has developed to the fifth generation of commercialization, and the packaging method of IGBT has also been diversified. At present, the module structure of high-performance plastic shell is the most common way. In this structure, the IGBT chip is welde...

Claims

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Application Information

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IPC IPC(8): H01L23/31H01L23/29H01L23/06H01L23/10H01L23/48H01L23/367
Inventor 苏莹莹张朋刘文广韩荣刚包海龙张宇刘隽车家杰
Owner STATE GRID CORP OF CHINA
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