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Polymer-silicon dioxide coated carbon nanotube composite material, preparation method thereof, prepreg and copper-clad substrate

A carbon nanotube, silicon dioxide technology, used in chemical instruments and methods, electronic equipment, other household appliances, etc.

Active Publication Date: 2014-02-05
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no better solution at present, so it needs to be further developed.

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  • Polymer-silicon dioxide coated carbon nanotube composite material, preparation method thereof, prepreg and copper-clad substrate
  • Polymer-silicon dioxide coated carbon nanotube composite material, preparation method thereof, prepreg and copper-clad substrate
  • Polymer-silicon dioxide coated carbon nanotube composite material, preparation method thereof, prepreg and copper-clad substrate

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preparation example Construction

[0050] see figure 2 , the preparation method of the polymer-silicon dioxide-coated carbon nanotube composite material of one embodiment, comprises the steps:

[0051] Step S110: Prepare respectively an alcohol solution containing carbon nanotubes and an alcohol solution containing tetraethylorthosilicate.

[0052] Dissolving carbon nanotubes in absolute ethanol, adding deionized water and cetyltrimethylammonium bromide, adding ammonia water after ultrasonic dispersion, and preparing an alcohol solution containing carbon nanotubes.

[0053] Ammonia as a catalyst. Cetyltrimethylammonium bromide as a surfactant. Preferably, the solid-to-liquid ratio of carbon nanotubes, cetyltrimethylammonium bromide, absolute ethanol, deionized water and ammonia water is 1g:0.5g:80mL:20mL:1mL.

[0054] Dissolve ethyl orthosilicate in absolute ethanol to prepare an alcohol solution containing ethyl orthosilicate. The volume ratio of ethyl orthosilicate to absolute ethanol is preferably 8:10....

Embodiment 1

[0086] Preparation of copper clad substrate

[0087] 1. Preparation of silica-coated carbon nanotubes

[0088] (1) Add 80 mL of absolute ethanol, 20 mL of deionized water, 1.0 g of multi-walled carbon nanotubes and 0.5 g of cetyltrimethylammonium bromide into a three-necked flask, ultrasonically disperse for 1 hour, and then add 1 mL of ammonia water to prepare a mixture containing Alcoholic solution of carbon nanotubes;

[0089] (2) Add 8mL tetraethyl orthosilicate and 10mL absolute ethanol into a beaker, stir and mix evenly to prepare an alcohol solution containing tetraethyl orthosilicate, pour the alcohol solution containing tetraethyl orthosilicate into a separatory funnel middle. Keep the temperature in the three-necked flask at 30°C, and at the same time magnetically stir the alcohol solution containing carbon nanotubes, add the alcohol solution containing tetraethyl orthosilicate to the alcohol solution containing carbon nanotubes dropwise, and the dropwise addition ...

Embodiment 2

[0101] Preparation of copper clad substrate

[0102] 1. Preparation of silica-coated carbon nanotubes

[0103] (1) Add 80mL of absolute ethanol, 20mL of deionized water, 1.0g of multi-walled carbon nanotubes and 0.5g of cetyltrimethylammonium bromide into a three-necked flask, ultrasonically disperse for 1 hour, and then add 1mL of ammonia water to prepare Alcoholic solution of carbon nanotubes;

[0104] (2) Add 32mL tetraethyl orthosilicate and 10mL absolute ethanol into a beaker, stir and mix evenly to prepare an alcohol solution containing tetraethyl orthosilicate, and pour the alcohol solution containing tetraethyl orthosilicate into a separatory funnel middle. Keep the temperature in the three-necked flask at 30°C, and at the same time magnetically stir the alcohol solution containing carbon nanotubes, add the alcohol solution containing tetraethylorthosilicate to the alcohol solution containing carbon nanotubes dropwise, and the dropwise addition is completed within 2 ...

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Abstract

The invention relates to a polymer-silicon dioxide coated carbon nanotube composite material, a preparation method thereof, a prepreg and a copper-clad substrate. The polymer-silicon dioxide coated carbon nanotube composite material comprises 5%-25% of silicon dioxide coated carbon nanotubes, 70%-90% of polymer and 0.1%-5% of catalyst by weight. The silicon dioxide has high insulation performance so that the electrical conductivity of the silicon dioxide coated carbon nanotubes is low, and consequently, the electrical conductivity of the composite material is reduced; besides, the silicon dioxide also inhibits the aggregation of the carbon nanotubes, and simultaneously is capable of having an interface reaction with the polymer; as a result, the interfacial interaction is improved and the carbon nanotubes can be evenly dispersed in the polymer; and therefore, the polymer-silicon dioxide coated carbon nanotube composite material is beneficial to preparing a copper-clad substrate which is good in mechanical properties and low in dielectric properties.

Description

technical field [0001] The invention relates to the technical field of composite materials, in particular to a polymer-silicon dioxide-coated carbon nanotube composite material, a preparation method thereof, a prepreg and a copper-clad substrate. Background technique [0002] The copper-clad substrate (also known as the IC substrate) mainly provides support, protection and heat dissipation for the chip, and at the same time plays the role of electrical connection between the chip and the conventional printed circuit board (PCB). In recent years, electronic products are developing in the direction of portability, miniaturization, light weight and multi-function. This market demand has put forward higher and higher requirements for copper clad substrates. [0003] Carbon nanotubes have attracted widespread attention from scientists and industries due to their excellent mechanical and thermal properties. For example, the strength of carbon nanotubes is 2 to 3 orders of magnitu...

Claims

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Application Information

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IPC IPC(8): C08L79/04C08L79/08C08L63/00C08K9/10C08K9/06C08K7/00C08K3/04B32B15/08B32B15/20B32B27/12
CPCB32B15/08B32B15/20B32B27/12B32B2250/03B32B2305/076B32B2457/08C08K2201/011C08L79/04C08L79/08C08L2203/20C08K9/10C08K7/24
Inventor 曾小亮于淑会孙蓉
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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