4H-SiC Schottky barrier source/drain MOSFET device with field plate terminal protection and manufacturing method thereof

Abstract

The invention discloses a 4H-SiC Schottky barrier source / drain MOSFET device with field plate terminal protection and a manufacturing method thereof. The manufacturing method includes the steps of performing a standard cleaning process, depositing field area silicon dioxide through a field oxide LPCVD method, performing photoetching on an active area, performing HF bleaching, depositing polycrystalline silicon through a standard LPCVD polycrystalline silicon deposition process, doping the polycrystalline silicon, injecting phosphorus ions, etching the polycrystalline silicon, etching plasmas, sacrificing an oxidized sample 1, performing ion injection annealing, performing 1050 DEG C N2 atmosphere annealing, corroding and sacrificing an oxidation layer sample 1, performing HF bleaching, performing the standard cleaning process to form gate oxide and a side wall, performing annealing to 1050 DEG after oxidization, performing N2 atmosphere annealing, performing photoetching on a source / drain contact area, performing HF bleaching, performing photoetching on a metal lead to form 150nm metal electrode evaporation Ti, performing peeling, performing alloy annealing, and performing 700 DEG C N2 atmosphere annealing, wherein the device comprises a substrate and an epitaxial layer. According to the 4H-SiC Schottky barrier source / drain MOSFET device with field plate terminal protection and the manufacturing method of the 4H-SiC Schottky barrier source / drain MOSFET device with field plate terminal protection, the problem that transconductance and conductance resistance output characteristics of the device become poor due to the fact that 4H-SiC MOSFET is too low in inversion layer mobility ratio is better solved.

Description

technical field [0001] The invention belongs to the technical field of high-voltage semiconductor devices, and in particular relates to a 4H-SiC Schottky source-drain MOSFET device with field plate terminal protection and a preparation method thereof. Background technique [0002] Based on the cornerstone of the entire microelectronics field - the research and application of high-voltage MOSFET semiconductor devices made of silicon materials for more than half a century, high-voltage semiconductor devices have been greatly developed and greatly promoted the progress of power electronics technology. Since the 1980s, the limitations of the physical properties of silicon materials on the performance of silicon-based power devices have become more and more clear. There is a serious contradiction between the conduction voltage drop and the withstand voltage of silicon-based high-voltage MOSFET devices, and further development There is a bottleneck. [0003] At present, the main ...

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Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a 4H-SiC Schottky source-drain MOSFET device with field plate termination protection and its preparation method, aiming to solve the problem of low mobility of the inversion layer in the existing SiC MOSFET, which causes the device to cross The problem of deterioration of the output characteristics of conduction and on-resistance

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