Cleaning agent used for integrated circuit substrate silicon wafers and preparation method thereof

Abstract

The invention provides a cleaning agent used for integrated circuit substrate silicon wafers. The cleaning agent is prepared from the following raw materials in parts by weight: 3-4 parts of methenamine, 2-3 parts of sodium citrate, 1-2 parts of sodium carbonate, 2-3 parts of cellulase, 3-4 parts of sodium thiodisuccinate, 30-40 parts of ethanol, 4-5 parts of n-butyl alcohol, 1-2 parts of polyoxyethylene laurate, 3-5 parts of polyoxyethylene lauryl ether, 4-5 parts of auxiliary and 100-120 parts of deionized water. The cleaning agent has the beneficial effects that the surfactant of the cleaning has a good synergistic effect; the cleaning agent has strong capability of dissolving organic matters and metal ions and strong capability of removing inorganic matters, has a good oxide film removing effect and small corrosivity, is thorough in cleaning effect and is suitable for cleaning the integrated circuit substrate silicon wafers; the auxiliary can form a protective film on the surfaces of the silicon wafers to isolate air to prevent water and other molecules in the atmosphere from corroding the silicon wafers; the cleaning agent is resistant to oxidation and is convenient for operation of the next preparation process.

Description

technical field [0001] The invention relates to the field of cleaning agents, in particular to a cleaning agent for silicon chips of integrated circuit substrates and a preparation method thereof. Background technique [0002] Silicon wafer cleaning agent is widely used in photovoltaic, electronics and other industries to clean silicon wafers; because silicon wafers will be polluted during transportation, and the surface cleanliness is not very high, which will have a great impact on the upcoming corrosion and etching, so First, a series of cleaning operations are performed on the surface of the silicon wafer. The general idea of ​​cleaning is first to remove the organic contamination on the surface, and then dissolve the oxide film, because the oxide layer is "contamination trapping", which will cause epitaxial defects; then remove particles, metals, etc., and at the same time passivate the surface of the silicon wafer. [0003] At present, most silicon wafer cleaning agen...

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Problems solved by technology

[0003] At present, most silicon wafer cleaning agents use the No. 1 and No. 3 liquids in RAC cleaning, but the No. 1 liquid is alkaline, which may cause the silicon surface to be rough, and the temperature, concentration and time must be strictly controlled; the No. 3 liquid is acidic and has Strong corrosiveness, harmful to human health, high production cost, irritating smell, and polluting the environment, so the formula needs to be further improved to achieve the purpose of thorough cleaning, no pollution, low corrosion, human health, circuit safety, and cost reduction