Production method of nickel target and nickel target component

A manufacturing method and technology for nickel targets, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of uneven internal structure, inability to meet semiconductor sputtering process, coarse grains, etc.

Active Publication Date: 2014-02-12
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Description
  • Claims
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Problems solved by technology

[0008] The problem to be solved by the present invention is that the existing nickel target manufacturing method has uneven internal structure, coarse grains, and low magnetic permeability (PFT, Pass ...

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  • Production method of nickel target and nickel target component
  • Production method of nickel target and nickel target component
  • Production method of nickel target and nickel target component

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Embodiment Construction

[0063] As described in the background art, in the prior art, the processing technology of plastically deforming high-purity nickel ingots to produce high-purity nickel targets for semiconductors is less involved and incomplete. Therefore, how to produce nickel that meets the requirements The target material has become one of the most important problems to be solved at present.

[0064] PVD is usually carried out by magnetron sputtering. The so-called magnetron sputtering means that the plasma generated by the rare gas bombards the surface of the cathode sputtering target under the interaction of the electric field and the magnetic field, so that the molecules on the surface of the target, Atoms and electrons are sputtered out, and the sputtered particles have a certain kinetic energy, and shoot to the surface of the substrate in a certain direction, and deposit on the surface of the substrate to form a coating. The inventors found that in the process of coating by magnetron sp...

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Abstract

The invention provides a production method of a nickel target and a nickel target component. The production method of the nickel target comprises the following steps of providing a nickel ingot; performing hot forging on the nickel ingot to form a first nickel target blank; performing first heat treatment on the first nickel target blank to form a second nickel target blank, wherein the temperature of the first heat treatment is 450-550 DEG C, and the temperature is maintained for 1-2 hours; after the first heat treatment, performing hot rolling on the second nickel target blank to form a third nickel target blank; performing second heat treatment on the third nickel target blank to form a fourth nickel target blank, wherein the temperature of the second heat treatment is 300-500 DEG C, and the temperature is maintained for 1-2 hours; after the second heat treatment, performing cold rolling on the fourth nickel target blank to form a fifth nickel target blank; performing third heat treatment on the fifth nickel target blank to form the nickel target, wherein the temperature of the third heat treatment is 200-300 DEG C, and the temperature is maintained for 1-2 hours. By adopting the technical scheme, the produced nickel target has relatively uniform internal organization and good magnetic property.

Description

technical field [0001] The invention relates to the field of target processing, in particular to a method for manufacturing a nickel target and a nickel target component. Background technique [0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships , chemical industry, etc. Metal target components used in PVD are one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. [0003] The metal target component is composed of a metal target that meets the sputtering performance and a back plate with a certain strength. The back plate can play a supporting role when the metal target assembly is assembled to the sputtering base station, and has the effect of conducting heat. With th...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22F1/10
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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